Jenn Hwa Huang

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,957,790
- Issue date Mar 23, 2021
- NXP USA, INC.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with a protection layer and methods of fabric...
- Patent number 10,741,496
- Issue date Aug 11, 2020
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-on-Si switch devices
- Patent number 10,692,976
- Issue date Jun 23, 2020
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,644,142
- Issue date May 5, 2020
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,403,718
- Issue date Sep 3, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,355,085
- Issue date Jul 16, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with charge enhanced field plate structure and method
- Patent number 9,972,703
- Issue date May 15, 2018
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented field plate structure
- Patent number 9,893,156
- Issue date Feb 13, 2018
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a conductive feature formed over a cavity and method th...
- Patent number 9,871,107
- Issue date Jan 16, 2018
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,799,760
- Issue date Oct 24, 2017
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented field plate structure
- Patent number 9,647,075
- Issue date May 9, 2017
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-on-Si switch devices
- Patent number 9,601,638
- Issue date Mar 21, 2017
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with charge enhanced field plate structure and method
- Patent number 9,425,267
- Issue date Aug 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,153,448
- Issue date Oct 6, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,111,868
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 8,946,776
- Issue date Feb 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip-level humidity protection
- Patent number 8,836,133
- Issue date Sep 16, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 8,653,558
- Issue date Feb 18, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor gate process and structure
- Patent number 8,319,310
- Issue date Nov 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a bulk acoustic wave device and a transistor
- Patent number 8,304,271
- Issue date Nov 6, 2012
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Space efficient integrated circuit with passive devices
- Patent number 7,868,393
- Issue date Jan 11, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...
- Publication number 20220102529
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A PROTECTION LAYER AND METHODS OF FABRIC...
- Publication number 20200176389
- Publication date Jun 4, 2020
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
- Publication number 20190206994
- Publication date Jul 4, 2019
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
- Publication number 20190206998
- Publication date Jul 4, 2019
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20190198623
- Publication date Jun 27, 2019
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20190157440
- Publication date May 23, 2019
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED FIELD PLATE STRUCTURE
- Publication number 20170200794
- Publication date Jul 13, 2017
- NXP USA, Inc.
- JENN HWA HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-ON-SI SWITCH DEVICES
- Publication number 20170141190
- Publication date May 18, 2017
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED FIELD PLATE STRUCTURE
- Publication number 20170077245
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A CONDUCTIVE FEATURE FORMED OVER A CAVITY AND METHOD TH...
- Publication number 20160343809
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- BRUCE M. GREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD
- Publication number 20160343833
- Publication date Nov 24, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20150357452
- Publication date Dec 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20150132932
- Publication date May 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD
- Publication number 20140264360
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEXAS
- Jenn Hwa HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP-LEVEL HUMIDITY PROTECTION
- Publication number 20140103532
- Publication date Apr 17, 2014
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20130341678
- Publication date Dec 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20130341679
- Publication date Dec 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-ON-SI SWITCH DEVICES
- Publication number 20130099324
- Publication date Apr 25, 2013
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20130092947
- Publication date Apr 18, 2013
- BRUCE M. GREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR
- Publication number 20100295100
- Publication date Nov 25, 2010
- JENN HWA HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR GATE PROCESS AND STRUCTURE
- Publication number 20100244178
- Publication date Sep 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACE EFFICIENT INTEGRATRED CIRCUIT WITH PASSIVE DEVICES
- Publication number 20090212374
- Publication date Aug 27, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS

Jenn Hwa Huang

Person

Patents Grantslast 30 patents

Methods for forming semiconductor devices using sacrificial capping...

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor device with selectively etched surface passivation

Semiconductor devices with a protection layer and methods of fabric...

GaN-on-Si switch devices

Semiconductor devices with doped regions functioning as enhanced re...

Semiconductor devices with regrown contacts and methods of fabrication

Semiconductor devices with regrown contacts and methods of fabrication

Transistor with charge enhanced field plate structure and method

Segmented field plate structure

Device with a conductive feature formed over a cavity and method th...

Semiconductor device with selectively etched surface passivation

Segmented field plate structure

GaN-on-Si switch devices

Transistor with charge enhanced field plate structure and method

Semiconductor device with selectively etched surface passivation

Semiconductor device with selectively etched surface passivation

Semiconductor device with selectively etched surface passivation

Chip-level humidity protection

Semiconductor device and method of making

Field effect transistor gate process and structure

Integrated circuit having a bulk acoustic wave device and a transistor

Space efficient integrated circuit with passive devices

Patents Applicationslast 30 patents

METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICES WITH A PROTECTION LAYER AND METHODS OF FABRIC...

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEGMENTED FIELD PLATE STRUCTURE

GAN-ON-SI SWITCH DEVICES

SEGMENTED FIELD PLATE STRUCTURE

DEVICE WITH A CONDUCTIVE FEATURE FORMED OVER A CAVITY AND METHOD TH...

TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

Semiconductor Device with Selectively Etched Surface Passivation

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD

CHIP-LEVEL HUMIDITY PROTECTION

Semiconductor Device with Selectively Etched Surface Passivation

Semiconductor Device with Selectively Etched Surface Passivation

GAN-ON-SI SWITCH DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR

FIELD EFFECT TRANSISTOR GATE PROCESS AND STRUCTURE

SPACE EFFICIENT INTEGRATRED CIRCUIT WITH PASSIVE DEVICES