Jenn-Ming Kuo

Person

Edison, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making an article comprising an oxide layer on a GaAs-bas...
- Patent number 6,495,407
- Issue date Dec 17, 2002
- Agere Systems Inc.
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an article comprising an oxide layer on a GaAs-bas...
- Patent number 6,271,069
- Issue date Aug 7, 2001
- Agere Systems Guardian Corp.
- Young-Kai Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a flip-chip bonded GaAs-based opto-electronic device
- Patent number 5,923,951
- Issue date Jul 13, 1999
- Lucent Technologies Inc.
- Keith Wayne Goossen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InAlGaP devices
- Patent number 5,844,261
- Issue date Dec 1, 1998
- Lucent Technologies Inc.
- Jenn-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise, high power pseudomorphic HEMT
- Patent number 5,811,844
- Issue date Sep 22, 1998
- Lucent Technologies Inc.
- Jenn-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor heterostructures of gallium arsenide...
- Patent number 5,308,444
- Issue date May 3, 1994
- AT&T Bell Laboratories
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising a strained layer quantum well laser
- Patent number 5,212,704
- Issue date May 18, 1993
- AT&T Bell Laboratories
- Young-Kai Chen
- B82 - NANO-TECHNOLOGY

Jenn-Ming Kuo

Person

Patents Grantslast 30 patents

Method of making an article comprising an oxide layer on a GaAs-bas...

Method of making an article comprising an oxide layer on a GaAs-bas...

Method of making a flip-chip bonded GaAs-based opto-electronic device

InAlGaP devices

Low noise, high power pseudomorphic HEMT

Method of making semiconductor heterostructures of gallium arsenide...

Article comprising a strained layer quantum well laser