Jens-Peer Stengl

Person

Grafrath, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Signal transmission arrangement
- Patent number 9,431,379
- Issue date Aug 30, 2016
- Infineon Technologies Austria AG
- Martin Kerber
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Signal transmission arrangement
- Patent number 8,970,000
- Issue date Mar 3, 2015
- Infineon Technologies Austria AG
- Martin Kerber
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High voltage resistance coupling structure
- Patent number 8,790,985
- Issue date Jul 29, 2014
- Infineon Technologies Austria AG
- Uwe Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal transmission arrangement
- Patent number 8,319,573
- Issue date Nov 27, 2012
- Infineon Technologies Austria AG
- Peter Kanschat
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage resistance coupling structure
- Patent number 8,278,730
- Issue date Oct 2, 2012
- Infineon Technologies Austria AG
- Uwe Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor configuration having an integrated coupler and method...
- Patent number 7,710,215
- Issue date May 4, 2010
- Infineon Technologies Austria AG
- Uwe Wahl
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
High voltage resistant edge structure for semiconductor components
- Patent number 6,870,201
- Issue date Mar 22, 2005
- Infineon Technologies AG
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically structured power semiconductor component
- Patent number 6,831,327
- Issue date Dec 14, 2004
- Infineon Technologies AG
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect controlled semiconductor component
- Patent number 6,812,524
- Issue date Nov 2, 2004
- Infineon Technologies AG
- Dirk Ahlers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode structure
- Patent number 6,465,863
- Issue date Oct 15, 2002
- Infineon Technologies AG
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating residual oxygen impurities from silicon wafe...
- Patent number 6,309,974
- Issue date Oct 30, 2001
- Infineon Technologies AG
- Helmut Strack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor component which can be controlled by a field effect
- Patent number 6,271,562
- Issue date Aug 7, 2001
- Infineon Technologies AG
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a high-voltage endurance edge structure
- Patent number 6,037,631
- Issue date Mar 14, 2000
- Siemens Aktiengesellschaft
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power semiconductor component having a substrate with a...
- Patent number 5,726,478
- Issue date Mar 10, 1998
- Siemens Aktiengesellschaft
- Josef-Matthias Gantioler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Signal Transmission Arrangement
- Publication number 20150132890
- Publication date May 14, 2015
- Infineon Technologies Austria AG
- Martin Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Resistance Coupling Structure
- Publication number 20120273917
- Publication date Nov 1, 2012
- Infineon Technologies Austria AG
- Uwe Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Signal Transmission Arrangement
- Publication number 20110176339
- Publication date Jul 21, 2011
- Martin Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Signal Transmission Arrangement
- Publication number 20110148549
- Publication date Jun 23, 2011
- Peter Kanschat
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE
- Publication number 20110095392
- Publication date Apr 28, 2011
- Infineon Technologies Austria AG
- Uwe Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CONFIGURATION HAVING AN INTEGRATED COUPLER AND METHOD...
- Publication number 20090195335
- Publication date Aug 6, 2009
- Infineon Technologies Austria AG
- UWE WAHL
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Method and device for transferring a signal from a signal source to...
- Publication number 20020106996
- Publication date Aug 8, 2002
- Jens-Peer Stengl
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Field effect controlled semiconductor component
- Publication number 20020096708
- Publication date Jul 25, 2002
- Dirk Ahlers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertically structured power semiconductor component
- Publication number 20020063280
- Publication date May 30, 2002
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS

Jens-Peer Stengl

Person

Patents Grantslast 30 patents

Signal transmission arrangement

Signal transmission arrangement

High voltage resistance coupling structure

Signal transmission arrangement

High voltage resistance coupling structure

Semiconductor configuration having an integrated coupler and method...

High voltage resistant edge structure for semiconductor components

Vertically structured power semiconductor component

Field effect controlled semiconductor component

Power diode structure

Method for eliminating residual oxygen impurities from silicon wafe...

Semiconductor component which can be controlled by a field effect

Semiconductor component with a high-voltage endurance edge structure

Integrated power semiconductor component having a substrate with a...

Patents Applicationslast 30 patents

Signal Transmission Arrangement

High Voltage Resistance Coupling Structure

Signal Transmission Arrangement

Signal Transmission Arrangement

HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE

SEMICONDUCTOR CONFIGURATION HAVING AN INTEGRATED COUPLER AND METHOD...

Method and device for transferring a signal from a signal source to...

Field effect controlled semiconductor component

Vertically structured power semiconductor component