Jens Peter Konrath

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,842,938
- Issue date Dec 12, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,677,023
- Issue date Jun 13, 2023
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with Schottky contact
- Patent number 11,380,756
- Issue date Jul 5, 2022
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including junction material in a trench and ma...
- Patent number 11,322,596
- Issue date May 3, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 11,302,795
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,217,500
- Issue date Jan 4, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a passivation structure and manufact...
- Patent number 11,211,303
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,158,557
- Issue date Oct 26, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 11,063,142
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming semiconductor devices
- Patent number 11,024,502
- Issue date Jun 1, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,937,784
- Issue date Mar 2, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a circuit for controlling a field effect...
- Patent number 10,818,749
- Issue date Oct 27, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a Schottky c...
- Patent number 10,763,339
- Issue date Sep 1, 2020
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preliminary trenches formed in kerf regions for die singulation
- Patent number 10,672,661
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and corresponding manufacturing method
- Patent number 10,593,668
- Issue date Mar 17, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming silicon oxide layers by radical oxidation and semiconductor...
- Patent number 10,566,426
- Issue date Feb 18, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a method for forming a semiconductor device
- Patent number 10,431,681
- Issue date Oct 1, 2019
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-ohmic contact between SiC and a conta...
- Patent number 10,431,698
- Issue date Oct 1, 2019
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a doped substrate layer and correspo...
- Patent number 10,411,097
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a semiconductor device having a non-ohmic...
- Patent number 10,199,514
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate arrangements and a method for forming a sem...
- Patent number 10,121,691
- Issue date Nov 6, 2018
- Infineon Technologies AG
- Peter Irsigler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for forming a semiconductor device
- Patent number 10,043,866
- Issue date Aug 7, 2018
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device comprising a metal...
- Patent number 10,014,383
- Issue date Jul 3, 2018
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a contact layer on a semiconductor body
- Patent number 10,002,930
- Issue date Jun 19, 2018
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a barrier layer made of amorphous molyb...
- Patent number 9,997,459
- Issue date Jun 12, 2018
- Infineon Technologies AG
- Jochen Hilsenbeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing an electronic component and an electronic com...
- Patent number 9,966,348
- Issue date May 8, 2018
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA
- Publication number 20240105832
- Publication date Mar 28, 2024
- INFINEON TECHNOLOGIES AG
- Thomas Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230317797
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE
- Publication number 20230299147
- Publication date Sep 21, 2023
- Infineon
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220359748
- Publication date Nov 10, 2022
- Infineon Technologies Austria AG
- Jens Peter KONRATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SIL...
- Publication number 20220199800
- Publication date Jun 23, 2022
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20220093483
- Publication date Mar 24, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20220005742
- Publication date Jan 6, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device and Semiconductor De...
- Publication number 20210013320
- Publication date Jan 14, 2021
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT
- Publication number 20200219972
- Publication date Jul 9, 2020
- INFINEON TECHNOLOGIES AG
- Caspar LEENDERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...
- Publication number 20200203513
- Publication date Jun 25, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter KONRATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20200194428
- Publication date Jun 18, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...
- Publication number 20200185297
- Publication date Jun 11, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preliminary Trenches Formed in Kerf Regions for Die Singulation
- Publication number 20200135564
- Publication date Apr 30, 2020
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING JUNCTION MATERIAL IN A TRENCH AND MA...
- Publication number 20200066857
- Publication date Feb 27, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming Semiconductor Devices
- Publication number 20190362976
- Publication date Nov 28, 2019
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20190311966
- Publication date Oct 10, 2019
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20190252282
- Publication date Aug 15, 2019
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic...
- Publication number 20190140111
- Publication date May 9, 2019
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Corresponding Manufacturing Method
- Publication number 20180190651
- Publication date Jul 5, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR...
- Publication number 20180175150
- Publication date Jun 21, 2018
- INFINEON TECHNOLOGIES AG
- Anton MAUDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having a Doped Substrate Layer and Correspo...
- Publication number 20180158916
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic...
- Publication number 20180158964
- Publication date Jun 7, 2018
- Infineon Technologies Austria AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming a Plurality of Semiconductor Devices on a Plura...
- Publication number 20180122918
- Publication date May 3, 2018
- INFINEON TECHNOLOGIES AG
- Jochen Hilsenbeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING AN ELECTRONIC COMPONENT AND AN ELECTRONIC COM...
- Publication number 20180019218
- Publication date Jan 18, 2018
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING AN ELECTRONIC COMPONENT AND AN ELECTRONIC COM...
- Publication number 20170309583
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and a Method for Forming a Semiconductor Device
- Publication number 20170301792
- Publication date Oct 19, 2017
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Producing a Semiconductor Device
- Publication number 20170243828
- Publication date Aug 24, 2017
- INFINEON TECHNOLOGIES AG
- Jochen Hilsenbeck
- H01 - BASIC ELECTRIC ELEMENTS

Jens Peter Konrath

Person

Patents Grantslast 30 patents

Semiconductor device having a silicon carbide drift zone over a sil...

Method of producing a silicon carbide device with a trench gate

Semiconductor device with a passivation layer and method for produc...

Semiconductor device and method for forming a semiconductor device

Semiconductor device

Silicon carbide device with trench gate

Silicon carbide device with Schottky contact

Semiconductor device including junction material in a trench and ma...

Method of manufacturing a semiconductor device and semiconductor de...

Semiconductor device and method for forming a semiconductor device

Semiconductor device including a passivation structure and manufact...

Semiconductor device with a passivation layer and method for produc...

Semiconductor device including silicon carbide body and method of m...

Semiconductor devices and methods for forming semiconductor devices

Method of manufacturing a semiconductor device

Semiconductor devices and a circuit for controlling a field effect...

Method for manufacturing a semiconductor device having a Schottky c...

Preliminary trenches formed in kerf regions for die singulation

Semiconductor device and corresponding manufacturing method

Forming silicon oxide layers by radical oxidation and semiconductor...

Semiconductor devices and a method for forming a semiconductor device

Semiconductor device with non-ohmic contact between SiC and a conta...

Semiconductor component having a doped substrate layer and correspo...

Methods for manufacturing a semiconductor device having a non-ohmic...

Semiconductor substrate arrangements and a method for forming a sem...

Semiconductor device and a method for forming a semiconductor device

Method for manufacturing a semiconductor device comprising a metal...

Forming a contact layer on a semiconductor body

Semiconductor device having a barrier layer made of amorphous molyb...

Method for processing an electronic component and an electronic com...

Patents Applicationslast 30 patents

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA

WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SIL...

Semiconductor Device and Method for Forming a Semiconductor Device

Semiconductor Device with a Passivation Layer and Method for Produc...

Silicon Carbide Device with Trench Gate

Method of Manufacturing a Semiconductor Device and Semiconductor De...

SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...

Method of Manufacturing a Semiconductor Device

SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...

Preliminary Trenches Formed in Kerf Regions for Die Singulation

SEMICONDUCTOR DEVICE INCLUDING JUNCTION MATERIAL IN A TRENCH AND MA...

Semiconductor Devices and Methods for Forming Semiconductor Devices

Semiconductor Device and Method for Forming a Semiconductor Device

Semiconductor Device with a Passivation Layer and Method for Produc...

Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic...

Semiconductor Device and Corresponding Manufacturing Method

FORMING SILICON OXIDE LAYERS BY RADICAL OXIDATION AND SEMICONDUCTOR...

Semiconductor Component Having a Doped Substrate Layer and Correspo...

Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic...

Methods for Forming a Plurality of Semiconductor Devices on a Plura...

METHOD FOR PROCESSING AN ELECTRONIC COMPONENT AND AN ELECTRONIC COM...

METHOD FOR PROCESSING AN ELECTRONIC COMPONENT AND AN ELECTRONIC COM...

Semiconductor Devices and a Method for Forming a Semiconductor Device

Semiconductor Device and Method for Producing a Semiconductor Device