Jeong-Dong Choe

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,652,928
- Issue date Feb 18, 2014
- Samsung Electronics Co., Ltd.
- Young-Bae Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having shared bit line...
- Patent number 8,486,802
- Issue date Jul 16, 2013
- Samsung Electronics Co., Ltd.
- Dong-hoon Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel fin field-effect transistors having increased sour...
- Patent number 8,466,511
- Issue date Jun 18, 2013
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synchronous pulse plasma etching equipment and method of fabricatin...
- Patent number 8,460,508
- Issue date Jun 11, 2013
- Samsung Electronics Co., Ltd.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices including shared bit lines and methods...
- Patent number 8,426,272
- Issue date Apr 23, 2013
- Samsung Electronics Co., Ltd.
- Young-bae Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor device including a floating gate and asso...
- Patent number 8,330,205
- Issue date Dec 11, 2012
- Samsung Electronics Co., Ltd.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing charge trap-type non-volatile memory devices
- Patent number 8,178,408
- Issue date May 15, 2012
- Samsung Electronics Co., Ltd.
- Hak-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including driving transistors
- Patent number 8,059,469
- Issue date Nov 15, 2011
- Samsung Electronics Co., Ltd.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method of manufacturing the same
- Patent number 8,049,269
- Issue date Nov 1, 2011
- Samsung Electronics Co., Ltd.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,039,905
- Issue date Oct 18, 2011
- Samsung Electronics Co., Ltd.
- Young-Bae Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having shared bit line structure
- Patent number 8,035,152
- Issue date Oct 11, 2011
- Samsung Electronics Co., Ltd.
- Dong-hoon Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor device including a floating gate, method...
- Patent number 7,902,024
- Issue date Mar 8, 2011
- Samsung Electronics Co., Ltd.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistors (MOSFETs) includ...
- Patent number 7,883,969
- Issue date Feb 8, 2011
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices with enlarged recessed...
- Patent number 7,871,914
- Issue date Jan 18, 2011
- Samsung Electronics Co., Ltd.
- Seong-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating multichannel metal oxide semiconductor (MOS)...
- Patent number 7,670,912
- Issue date Mar 2, 2010
- Samsung Electronics Co., Ltd.
- Kyoung-Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating field effect transistors having multiple sta...
- Patent number 7,615,429
- Issue date Nov 10, 2009
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device employing buried insulating layer and method o...
- Patent number 7,575,964
- Issue date Aug 18, 2009
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with enlarged recessed gate electrodes
- Patent number 7,541,656
- Issue date Jun 2, 2009
- Samsung Electronics Co., Ltd.
- Seong-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor (MOS) transistors having buffer regions b...
- Patent number 7,541,645
- Issue date Jun 2, 2009
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS Transistors having inverted T-shaped gate electrodes and fabric...
- Patent number 7,534,707
- Issue date May 19, 2009
- Samsung Electronics Co., Ltd.
- Shin-Ae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a field effect transistor and methods...
- Patent number 7,510,932
- Issue date Mar 31, 2009
- SAms Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor (MOS) transistors having three dimensiona...
- Patent number 7,473,963
- Issue date Jan 6, 2009
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned semiconductor contact structures
- Patent number 7,397,131
- Issue date Jul 8, 2008
- Samsung Electronics Co., Ltd.
- Seong-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating field effect transistors having multiple sta...
- Patent number 7,381,601
- Issue date Jun 3, 2008
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having partially insulated field effect transi...
- Patent number 7,361,956
- Issue date Apr 22, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating fin field transistors
- Patent number 7,332,386
- Issue date Feb 19, 2008
- Samsung Electronics Co., Ltd.
- Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device employing buried insulating layer and method o...
- Patent number 7,321,144
- Issue date Jan 22, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming metal oxide semiconductor (MOS) transistors havi...
- Patent number 7,285,466
- Issue date Oct 23, 2007
- Samsung Electronics Co., Ltd.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor
- Patent number 7,265,011
- Issue date Sep 4, 2007
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor-on-insulator (SOI) substrates...
- Patent number 7,265,031
- Issue date Sep 4, 2007
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY DEVICES INCLUDING SHARED BIT LINES AND METHODS...
- Publication number 20120276729
- Publication date Nov 1, 2012
- Young-bae YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20120015496
- Publication date Jan 19, 2012
- Samsung Electronics Co., Ltd.
- Young-Bae YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SHARED BIT LINE...
- Publication number 20120009759
- Publication date Jan 12, 2012
- Samsung Electronics Co., Ltd.
- Dong-hoon JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20120007165
- Publication date Jan 12, 2012
- SAMSUNG ELECTRONICS CO., LTD.
- Myoung-Bum LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE AND ASSO...
- Publication number 20110156125
- Publication date Jun 30, 2011
- Samsung Electronics Co., Ltd.
- Se-Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Includ...
- Publication number 20110079831
- Publication date Apr 7, 2011
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20100237401
- Publication date Sep 23, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- JEONG-DONG CHOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING CHARGE TRAP-TYPE NON-VOLATILE MEMORY DEVICES
- Publication number 20100173469
- Publication date Jul 8, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Hak-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICES USING VOID SPACES
- Publication number 20100127328
- Publication date May 27, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Synchronous pulse plasma etching equipment and method of fabricatin...
- Publication number 20100130018
- Publication date May 27, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multichannel Metal Oxide Semiconductor (MOS) Transistors
- Publication number 20100109087
- Publication date May 6, 2010
- Kyoung-Hwan Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Channel Fin Field-Effect Transistors Having Increased Sour...
- Publication number 20100044784
- Publication date Feb 25, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DRIVING TRANSISTORS
- Publication number 20100008152
- Publication date Jan 14, 2010
- Samsung Electronics Co., Ltd.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having shared bit line structure and method of...
- Publication number 20100001366
- Publication date Jan 7, 2010
- Dong-hoon Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory devices including shared bit lines and methods...
- Publication number 20090302472
- Publication date Dec 10, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Young-bae Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20090230456
- Publication date Sep 17, 2009
- Young-Bae Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH ENLARGED RECESSED...
- Publication number 20090215238
- Publication date Aug 27, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Seong-Ho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EMPLOYING BURIED INSULATING LAYER AND METHOD O...
- Publication number 20080296649
- Publication date Dec 4, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile semiconductor device including a floating gate, method...
- Publication number 20080265304
- Publication date Oct 30, 2008
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) INCLUD...
- Publication number 20080224206
- Publication date Sep 18, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSI...
- Publication number 20080145989
- Publication date Jun 19, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING FIELD EFFECT TRANSISTORS HAVING MULTIPLE STA...
- Publication number 20080090362
- Publication date Apr 17, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory device and method of manufacturing the same
- Publication number 20080061361
- Publication date Mar 13, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Se-Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A FIELD EFFECT TRANSISTOR AND METHODS...
- Publication number 20080032469
- Publication date Feb 7, 2008
- Samsung Electronics Co., Ltd.
- Chang-Woo OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Oxide Semiconductor (MOS) Transistors Having Three Dimensiona...
- Publication number 20080001218
- Publication date Jan 3, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory device and method of manufacturing the non-vola...
- Publication number 20080001209
- Publication date Jan 3, 2008
- Eun-Suk Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATES AND SEMICONDUCTOR DEVIC...
- Publication number 20070257312
- Publication date Nov 8, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD OF FORMING THE GATE STRUCTURE, SEMICONDUC...
- Publication number 20070210368
- Publication date Sep 13, 2007
- Samsung Electronics Co., Ltd.
- Eun-Suk CHO
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nonvolatile memory devices and methods of forming the same
- Publication number 20070205459
- Publication date Sep 6, 2007
- Eun-Suk Cho
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING TWO DIFFERENT OPERATION MODES EMPLOYING...
- Publication number 20070184611
- Publication date Aug 9, 2007
- Samsung Electronics Co., Ltd.
- Chang-Woo Oh
- H01 - BASIC ELECTRIC ELEMENTS

Jeong-Dong Choe

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device

Method of manufacturing semiconductor device having shared bit line...

Vertical channel fin field-effect transistors having increased sour...

Synchronous pulse plasma etching equipment and method of fabricatin...

Non-volatile memory devices including shared bit lines and methods...

Nonvolatile semiconductor device including a floating gate and asso...

Methods of manufacturing charge trap-type non-volatile memory devices

Semiconductor device including driving transistors

Non-volatile memory device and method of manufacturing the same

Semiconductor device

Semiconductor device having shared bit line structure

Nonvolatile semiconductor device including a floating gate, method...

Metal oxide semiconductor field effect transistors (MOSFETs) includ...

Methods of fabricating semiconductor devices with enlarged recessed...

Methods of fabricating multichannel metal oxide semiconductor (MOS)...

Methods of fabricating field effect transistors having multiple sta...

Semiconductor device employing buried insulating layer and method o...

Semiconductor devices with enlarged recessed gate electrodes

Metal oxide semiconductor (MOS) transistors having buffer regions b...

MOS Transistors having inverted T-shaped gate electrodes and fabric...

Semiconductor devices having a field effect transistor and methods...

Metal oxide semiconductor (MOS) transistors having three dimensiona...

Self-aligned semiconductor contact structures

Methods of fabricating field effect transistors having multiple sta...

Semiconductor device having partially insulated field effect transi...

Methods of fabricating fin field transistors

Semiconductor device employing buried insulating layer and method o...

Methods of forming metal oxide semiconductor (MOS) transistors havi...

Method of manufacturing a transistor

Methods of fabricating semiconductor-on-insulator (SOI) substrates...

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY DEVICES INCLUDING SHARED BIT LINES AND METHODS...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SHARED BIT LINE...

SEMICONDUCTOR DEVICES

NONVOLATILE SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE AND ASSO...

Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Includ...

GATE STRUCTURES OF SEMICONDUCTOR DEVICES

METHODS OF MANUFACTURING CHARGE TRAP-TYPE NON-VOLATILE MEMORY DEVICES

SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICES USING VOID SPACES

Synchronous pulse plasma etching equipment and method of fabricatin...

Multichannel Metal Oxide Semiconductor (MOS) Transistors

Vertical Channel Fin Field-Effect Transistors Having Increased Sour...

SEMICONDUCTOR DEVICE INCLUDING DRIVING TRANSISTORS

Semiconductor device having shared bit line structure and method of...

Non-volatile memory devices including shared bit lines and methods...

Semiconductor device

METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH ENLARGED RECESSED...

SEMICONDUCTOR DEVICE EMPLOYING BURIED INSULATING LAYER AND METHOD O...

Nonvolatile semiconductor device including a floating gate, method...

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) INCLUD...

SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSI...

METHODS OF FABRICATING FIELD EFFECT TRANSISTORS HAVING MULTIPLE STA...

Non-volatile memory device and method of manufacturing the same

SEMICONDUCTOR DEVICES HAVING A FIELD EFFECT TRANSISTOR AND METHODS...

Metal Oxide Semiconductor (MOS) Transistors Having Three Dimensiona...

Non-volatile memory device and method of manufacturing the non-vola...

SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATES AND SEMICONDUCTOR DEVIC...

GATE STRUCTURE AND METHOD OF FORMING THE GATE STRUCTURE, SEMICONDUC...

Nonvolatile memory devices and methods of forming the same

SEMICONDUCTOR DEVICE HAVING TWO DIFFERENT OPERATION MODES EMPLOYING...