Jeong Rae Ro

Person

Daejeon, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing quantum wires
- Patent number 6,242,275
- Issue date Jun 5, 2001
- Electronics and Telecommunications Research Institute
- Sung Bock Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a quantum device
- Patent number 6,074,936
- Issue date Jun 13, 2000
- Electronics and Telecommunications Research Institute
- Jeong Rae Ro
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Growing method of GaAs quantum dots using chemical beam epitaxy
- Patent number 6,033,972
- Issue date Mar 7, 2000
- Electronics and Telecommunications Research Institute
- Jeong Rae Ro
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of InGaSa p-n Junction by control of growth temperature
- Patent number 5,858,818
- Issue date Jan 12, 1999
- Electronics and Telecommunications Research Institute
- Jeong-Rae Ro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a high density quantum wire
- Patent number 5,833,870
- Issue date Nov 10, 1998
- Electronics and Telecommunications Research Institute
- Sung Bock Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabricating method of GaAs substrate having V-shaped grooves
- Patent number 5,824,453
- Issue date Oct 20, 1998
- Electronics & Telecommunications Research Institute
- Sung-Bock Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method for compound semiconductor
- Patent number 5,770,475
- Issue date Jun 23, 1998
- Electronics and Telecommunications Research Institute
- Sung-Bock Kim
- B82 - NANO-TECHNOLOGY

Jeong Rae Ro

Person

Patents Grantslast 30 patents

Method for manufacturing quantum wires

Method of fabricating a quantum device

Growing method of GaAs quantum dots using chemical beam epitaxy

Formation of InGaSa p-n Junction by control of growth temperature

Method for forming a high density quantum wire

Fabricating method of GaAs substrate having V-shaped grooves

Crystal growth method for compound semiconductor