Jeonghyun Hwang

Person

Ithaca, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integration schemes leveraging a bulk semiconductor substrat...
- Patent number 12,087,764
- Issue date Sep 10, 2024
- GLOBALFOUNDRIES U.S. INC.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with through-metal through-substrate i...
- Patent number 12,062,574
- Issue date Aug 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted isolation for device integration on a common substrate
- Patent number 12,002,878
- Issue date Jun 4, 2024
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with self-aligned gate and self-aligned source/drain ter...
- Patent number 11,916,119
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures with air gap isolation features
- Patent number 11,881,506
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with semiconductor-based isolation str...
- Patent number 11,710,655
- Issue date Jul 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 11,646,351
- Issue date May 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted isolation for device integration on a common substrate
- Patent number 11,569,374
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integration schemes leveraging a bulk semiconductor substrat...
- Patent number 11,469,225
- Issue date Oct 11, 2022
- GLOBALFOUNDRIES U.S. INC.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with semiconductor-based isolation str...
- Patent number 11,177,158
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,177,345
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Henry L. Aldridge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly doped III-nitride semiconductors
- Patent number 7,993,938
- Issue date Aug 9, 2011
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an AlN coated heterojunction field effect transistor
- Patent number 7,622,322
- Issue date Nov 24, 2009
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly doped III-nitride semiconductors
- Patent number 7,485,901
- Issue date Feb 3, 2009
- Cornell Research Foundation Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly doped III-nitride semiconductors
- Patent number 7,482,191
- Issue date Jan 27, 2009
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly doped III-nitride semiconductors
- Patent number 6,953,740
- Issue date Oct 11, 2005
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly doped III-nitride semiconductors
- Patent number 6,888,170
- Issue date May 3, 2005
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...
- Publication number 20240222366
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OVER PATTERNED BURIED POROUS LAYER OF SEMICONDUCTOR MATERIAL
- Publication number 20240006524
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. LEVY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTI-LEVEL SELF-ALIGNED GATE AND SOURCE/DRAIN TERM...
- Publication number 20230207639
- Publication date Jun 29, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH SELF-ALIGNED GATE AND SELF-ALIGNED SOURCE/DRAIN TER...
- Publication number 20230139011
- Publication date May 4, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTED ISOLATION FOR DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20230121393
- Publication date Apr 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES WITH AIR GAP ISOLATION FEATURES
- Publication number 20230037420
- Publication date Feb 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH THROUGH-METAL THROUGH-SUBSTRATE I...
- Publication number 20230034728
- Publication date Feb 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Zhong-Xiang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...
- Publication number 20220392888
- Publication date Dec 8, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTI-LEVEL SELF-ALIGNED GATE AND SOURCE/DRAIN TERM...
- Publication number 20220223694
- Publication date Jul 14, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTED ISOLATION FOR DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20220173233
- Publication date Jun 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES
- Publication number 20220165853
- Publication date May 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- JOHNATAN AVRAHAM KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...
- Publication number 20220122963
- Publication date Apr 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STR...
- Publication number 20220044960
- Publication date Feb 10, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES
- Publication number 20220037482
- Publication date Feb 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- JOHNATAN AVRAHAM KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210384297
- Publication date Dec 9, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Henry L. ALDRIDGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STR...
- Publication number 20210265198
- Publication date Aug 26, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY DOPED III-NITRIDE SEMICONDUCTORS
- Publication number 20090165816
- Publication date Jul 2, 2009
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly doped III-nitride semiconductors
- Publication number 20050179050
- Publication date Aug 18, 2005
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly doped III-nitride semiconductors
- Publication number 20050179047
- Publication date Aug 18, 2005
- Cornell Research Foundation, Inc.
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly doped III-nitride semiconductors
- Publication number 20030176003
- Publication date Sep 18, 2003
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly doped III-nitride semiconductors
- Publication number 20030173578
- Publication date Sep 18, 2003
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIN coated heterojunction field effect transistor and method of for...
- Publication number 20020137236
- Publication date Sep 26, 2002
- William J. Schaff
- H01 - BASIC ELECTRIC ELEMENTS

Jeonghyun Hwang

Person

Patents Grantslast 30 patents

Transistor with multi-level self-aligned gate and source/drain term...

Device integration schemes leveraging a bulk semiconductor substrat...

Integrated circuit structure with through-metal through-substrate i...

Implanted isolation for device integration on a common substrate

Transistor with self-aligned gate and self-aligned source/drain ter...

Gate structures with air gap isolation features

Integrated circuit structure with semiconductor-based isolation str...

Transistor with multi-level self-aligned gate and source/drain term...

Symmetric arrangement of field plates in semiconductor devices

Implanted isolation for device integration on a common substrate

Device integration schemes leveraging a bulk semiconductor substrat...

Symmetric arrangement of field plates in semiconductor devices

Integrated circuit structure with semiconductor-based isolation str...

Heterojunction bipolar transistor

Highly doped III-nitride semiconductors

Method of forming an AlN coated heterojunction field effect transistor

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

Patents Applicationslast 30 patents

DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...

DEVICE OVER PATTERNED BURIED POROUS LAYER OF SEMICONDUCTOR MATERIAL

TRANSISTOR WITH MULTI-LEVEL SELF-ALIGNED GATE AND SOURCE/DRAIN TERM...

TRANSISTOR WITH SELF-ALIGNED GATE AND SELF-ALIGNED SOURCE/DRAIN TER...

IMPLANTED ISOLATION FOR DEVICE INTEGRATION ON A COMMON SUBSTRATE

GATE STRUCTURES WITH AIR GAP ISOLATION FEATURES

INTEGRATED CIRCUIT STRUCTURE WITH THROUGH-METAL THROUGH-SUBSTRATE I...

DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...

TRANSISTOR WITH MULTI-LEVEL SELF-ALIGNED GATE AND SOURCE/DRAIN TERM...

IMPLANTED ISOLATION FOR DEVICE INTEGRATION ON A COMMON SUBSTRATE

SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES

DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...

INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STR...

SYMMETRIC ARRANGEMENT OF FIELD PLATES IN SEMICONDUCTOR DEVICES

HETEROJUNCTION BIPOLAR TRANSISTOR

INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STR...

HIGHLY DOPED III-NITRIDE SEMICONDUCTORS

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

Highly doped III-nitride semiconductors

AIN coated heterojunction field effect transistor and method of for...