Jeremy D. Fields

Person

Portland, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
SEAM MITIGATION AND INTEGRATED LINER FOR GAP FILL
- Publication number 20230175117
- Publication date Jun 8, 2023
- LAM RESEARCH CORPORATION
- Dustin Zachary AUSTIN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IN-SITU PECVD CAP LAYER
- Publication number 20230002887
- Publication date Jan 5, 2023
- LAM RESEARCH CORPORATION
- Jeremy David FIELDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RADIO FREQUENCY (RF) POWER IMBALANCING IN A MULTI-STATION INTEGRATE...
- Publication number 20220375721
- Publication date Nov 24, 2022
- LAM RESEARCH CORPORATION
- Jeremy David Fields
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA-ENHANCED ATOMIC LAYER DEPOSITION WITH RADIO-FREQUENCY POWER...
- Publication number 20220351940
- Publication date Nov 3, 2022
- LAM RESEARCH CORPORATION
- Jeremy David Fields
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THROUGHPUT IMPROVEMENT WITH INTERVAL CONDITIONING PURGING
- Publication number 20210395885
- Publication date Dec 23, 2021
- LAM RESEARCH CORPORATION
- Chun-Hao Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MODIFYING HYDROPHOBICITY OF A WAFER SURFACE USING AN ORGANOSILICON...
- Publication number 20210384029
- Publication date Dec 9, 2021
- LAM RESEARCH CORPORATION
- Jeremy D. Fields
- H01 - BASIC ELECTRIC ELEMENTS

Jeremy D. Fields

Person

Patents Applicationslast 30 patents

SEAM MITIGATION AND INTEGRATED LINER FOR GAP FILL

IN-SITU PECVD CAP LAYER

RADIO FREQUENCY (RF) POWER IMBALANCING IN A MULTI-STATION INTEGRATE...

PLASMA-ENHANCED ATOMIC LAYER DEPOSITION WITH RADIO-FREQUENCY POWER...

THROUGHPUT IMPROVEMENT WITH INTERVAL CONDITIONING PURGING

MODIFYING HYDROPHOBICITY OF A WAFER SURFACE USING AN ORGANOSILICON...