Jerome Ciavatti

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS fin-type field-effect transistors including a dummy gate
- Patent number 10,644,149
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device structures with doped regions providing charge sinking
- Patent number 10,593,754
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled memory structures or other logic devices with middle of the...
- Patent number 10,475,890
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with buried bitlines below vertical field effect trans...
- Patent number 10,418,365
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiple gate length device with self-aligned top junction
- Patent number 10,410,929
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain contact structures on integrated ci...
- Patent number 10,373,877
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS finFET structures with shallow trench isolation inside the fin
- Patent number 10,290,712
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-port vertical SRAM circuit structure and method for producing t...
- Patent number 10,211,206
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric spacer for preventing epitaxial merge between adjacent d...
- Patent number 10,163,635
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical SRAM structure
- Patent number 10,163,915
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS FinFET structures with trench isolation in the drain extension
- Patent number 10,164,006
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with buried bitlines below vertical field effect trans...
- Patent number 10,134,739
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure without gate contact and method of for...
- Patent number 10,121,893
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS finFET structures with multiple gate structures
- Patent number 10,121,878
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM structure with a single diffusion break
- Patent number 10,026,740
- Issue date Jul 17, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor disposed directly upon a sac cap of a gate structure of a...
- Patent number 9,876,010
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure without gate contact and method of for...
- Patent number 9,842,927
- Issue date Dec 12, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and capacitor disposed directly upon a SAC cap of a gate s...
- Patent number 9,773,781
- Issue date Sep 26, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor structure with preserved isolation region
- Patent number 9,666,709
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar vertical dual source drift metal-oxide semiconductor (VD...
- Patent number 9,601,578
- Issue date Mar 21, 2017
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break structure and cuts later method of making
- Patent number 9,543,298
- Issue date Jan 10, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break structure
- Patent number 9,536,991
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making a self-aligned channel drift device
- Patent number 9,397,191
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar schottky diode and method of fabrication
- Patent number 9,324,827
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned channel drift device and methods of making such a device
- Patent number 9,202,911
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with improved source/drain junction architecture...
- Patent number 9,178,053
- Issue date Nov 3, 2015
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bipolar devices and an integrated circuit produc...
- Patent number 9,087,706
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced faraday shield for a semiconductor device
- Patent number 9,064,868
- Issue date Jun 23, 2015
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS FIN-TYPE FIELD-EFFECT TRANSISTORS INCLUDING A DUMMY GATE
- Publication number 20200135917
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Jagar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE STRUCTURES WITH DOPED REGIONS PROVIDING CHARGE SINKING
- Publication number 20200035785
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION
- Publication number 20190206743
- Publication date Jul 4, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS FINFET STRUCTURES WITH SHALLOW TRENCH ISOLATION INSIDE THE FIN
- Publication number 20190131406
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...
- Publication number 20190109197
- Publication date Apr 11, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING DEEP N-WELL SELF-ALIGNED WIT...
- Publication number 20190088557
- Publication date Mar 21, 2019
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH BURIED BITLINES BELOW VERTICAL FIELD EFFECT TRANS...
- Publication number 20190035791
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SRAM STRUCTURE
- Publication number 20180374857
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FOR...
- Publication number 20180061976
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR STRUCTURE WITH PRESERVED ISOLATION REGION
- Publication number 20160225895
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Xiaoli HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SCHOTTKY DIODE AND METHOD OF FABRICATION
- Publication number 20160118473
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Jagar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR VERTICAL DUAL SOURCE DRIFT METAL-OXIDE SEMICONDUCTOR (VD...
- Publication number 20160104774
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Jerome CIAVATTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING A SELF-ALIGNED CHANNEL DRIFT DEVICE
- Publication number 20160056265
- Publication date Feb 25, 2016
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITOR FOR SEMICONDUCTORS
- Publication number 20150364426
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...
- Publication number 20150108586
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BIPOLAR DEVICES AND AN INTEGRATED CIRCUIT PRODUC...
- Publication number 20150108580
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...
- Publication number 20150001640
- Publication date Jan 1, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BIPOLAR DEVICES AND AN INTEGRATED CIRCUIT PRODUC...
- Publication number 20150001634
- Publication date Jan 1, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHANNEL DRIFT DEVICE AND METHODS OF MAKING SUCH A DEVICE
- Publication number 20140361365
- Publication date Dec 11, 2014
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT TO A PROTECTION DIODE
- Publication number 20140302660
- Publication date Oct 9, 2014
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED FARADAY SHIELD FOR A SEMICONDUCTOR DEVICE
- Publication number 20140103420
- Publication date Apr 17, 2014
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET COMPATIBLE PC-BOUNDED ESD DIODE
- Publication number 20130292745
- Publication date Nov 7, 2013
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS

Jerome Ciavatti

Person

Patents Grantslast 30 patents

LDMOS fin-type field-effect transistors including a dummy gate

Fin-type transistors with spacers on the gates

SOI device structures with doped regions providing charge sinking

Scaled memory structures or other logic devices with middle of the...

Memory array with buried bitlines below vertical field effect trans...

Multiple gate length device with self-aligned top junction

Methods of forming source/drain contact structures on integrated ci...

LDMOS finFET structures with shallow trench isolation inside the fin

Two-port vertical SRAM circuit structure and method for producing t...

Asymmetric spacer for preventing epitaxial merge between adjacent d...

Vertical SRAM structure

LDMOS FinFET structures with trench isolation in the drain extension

Memory array with buried bitlines below vertical field effect trans...

Integrated circuit structure without gate contact and method of for...

LDMOS finFET structures with multiple gate structures

Integrated circuit structure incorporating non-planar field effect...

DRAM structure with a single diffusion break

Resistor disposed directly upon a sac cap of a gate structure of a...

Integrated circuit structure without gate contact and method of for...

Resistor and capacitor disposed directly upon a SAC cap of a gate s...

Non-planar semiconductor structure with preserved isolation region

Non-planar vertical dual source drift metal-oxide semiconductor (VD...

Single diffusion break structure and cuts later method of making

Single diffusion break structure

Methods of making a self-aligned channel drift device

Non-planar schottky diode and method of fabrication

Self-aligned channel drift device and methods of making such a device

Transistor device with improved source/drain junction architecture...

Methods of forming bipolar devices and an integrated circuit produc...

Advanced faraday shield for a semiconductor device

Patents Applicationslast 30 patents

LDMOS FIN-TYPE FIELD-EFFECT TRANSISTORS INCLUDING A DUMMY GATE

SOI DEVICE STRUCTURES WITH DOPED REGIONS PROVIDING CHARGE SINKING

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION

LDMOS FINFET STRUCTURES WITH SHALLOW TRENCH ISOLATION INSIDE THE FIN

SCALED MEMORY STRUCTURES OR OTHER LOGIC DEVICES WITH MIDDLE OF THE...

INTEGRATED CIRCUIT STRUCTURE INCLUDING DEEP N-WELL SELF-ALIGNED WIT...

MEMORY ARRAY WITH BURIED BITLINES BELOW VERTICAL FIELD EFFECT TRANS...

VERTICAL SRAM STRUCTURE

INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FOR...

NON-PLANAR SEMICONDUCTOR STRUCTURE WITH PRESERVED ISOLATION REGION

NON-PLANAR SCHOTTKY DIODE AND METHOD OF FABRICATION

NON-PLANAR VERTICAL DUAL SOURCE DRIFT METAL-OXIDE SEMICONDUCTOR (VD...

METHODS OF MAKING A SELF-ALIGNED CHANNEL DRIFT DEVICE

DECOUPLING CAPACITOR FOR SEMICONDUCTORS

TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...

METHODS OF FORMING BIPOLAR DEVICES AND AN INTEGRATED CIRCUIT PRODUC...

TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...

METHODS OF FORMING BIPOLAR DEVICES AND AN INTEGRATED CIRCUIT PRODUC...

SELF-ALIGNED CHANNEL DRIFT DEVICE AND METHODS OF MAKING SUCH A DEVICE

LOCAL INTERCONNECT TO A PROTECTION DIODE

ADVANCED FARADAY SHIELD FOR A SEMICONDUCTOR DEVICE

FINFET COMPATIBLE PC-BOUNDED ESD DIODE