Jhon Jhy Liaw

Person

Zhudong Township, Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Dual port memory cell with multiple metal layers
- Patent number 12,148,463
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for fabricating FinFETs having different fin numbers and co...
- Patent number 12,136,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around high-density and high-speed SRAM cells
- Patent number 12,127,387
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with different threshold voltages
- Patent number 12,119,379
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-port SRAM cell and layout method
- Patent number 12,114,473
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-port SRAM structure
- Patent number 12,108,586
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for reducing voltage degradation caused by parasitic resist...
- Patent number 12,106,801
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Interconnect structure for fin-like field effect transistor
- Patent number 12,100,628
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing
- Patent number 12,094,953
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell manufacturing
- Patent number 12,089,390
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,089,391
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductive layers with different thicknesses
- Patent number 12,089,389
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with source/drain modulation
- Patent number 12,080,607
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with embedded high-density and high-current SRAM...
- Patent number 12,082,389
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Isolation structures
- Patent number 12,074,057
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory chip structure having GAA transistors with different thresho...
- Patent number 12,057,487
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having gate dielectric layers of varying thic...
- Patent number 12,051,695
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both gate-all-around devices and pla...
- Patent number 12,046,684
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric fin in memory cell and meth...
- Patent number 12,048,136
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM circuits with aligned gate electrodes
- Patent number 12,041,761
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse cell structure
- Patent number 12,041,767
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin-based device having an isolation gate interfacing with a source...
- Patent number 12,034,007
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,033,940
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dian-Sheg Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a bit line in a different configuratio...
- Patent number 12,022,644
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain via
- Patent number 12,021,023
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with asymmetric contact
- Patent number 12,009,426
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
SRAM structures with improved write word line placement
- Patent number 11,997,844
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,996,360
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance in field-effect transistors
- Patent number 11,996,320
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for isolating epitaxially grown source/drain re...
- Patent number 11,990,525
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Gate-All-Around Device
- Publication number 20240387638
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Gate-All-Around Devices and Methods of Formi...
- Publication number 20240387659
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...
- Publication number 20240387632
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20240387635
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DI...
- Publication number 20240387674
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240387553
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS
- Publication number 20240381611
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Structure with Reduced Leakage Current
- Publication number 20240379859
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Fins With Different Dielectric Constants and Sizes in Di...
- Publication number 20240379452
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Yann Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379458
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240379460
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device For Logic and Memory Co-Optimization
- Publication number 20240380402
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240381606
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Gate Field-Effect Transistors In Integrated Circuits
- Publication number 20240381607
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240381609
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
Information Patent Application
Fin-Like Field Effect Transistors Having High Mobility Strained Cha...
- Publication number 20240379763
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-PORT SRAM CELL AND LAYOUT METHOD
- Publication number 20240381612
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
Via Structures
- Publication number 20240379546
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device Integration with Separated Fin-Like Field Effect...
- Publication number 20240379681
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Fabricating FinFETs Having Different Fin Numbers and Co...
- Publication number 20240379445
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH EMBEDDED HIGH-DENSITY AND HIGH-CURRENT SRAM...
- Publication number 20240373618
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
ISOLATION STRUCTURES
- Publication number 20240363397
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Cell Manufacturing
- Publication number 20240365526
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION
- Publication number 20240363435
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH GATE-ALL-AROUND DEVICES AND PLA...
- Publication number 20240355935
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-PORT SRAM CELL STRUCTURE
- Publication number 20240357790
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...
- Publication number 20240355877
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240347594
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chiang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE CELL STRUCTURE
- Publication number 20240349495
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE

Jhon Jhy Liaw

Person

Patents Grantslast 30 patents

Dual port memory cell with multiple metal layers

Methods for fabricating FinFETs having different fin numbers and co...

Gate-all-around high-density and high-speed SRAM cells

Gate all around transistors with different threshold voltages

Three-port SRAM cell and layout method

Two-port SRAM structure

Circuit for reducing voltage degradation caused by parasitic resist...

Interconnect structure for fin-like field effect transistor

Semiconductor manufacturing

Cell manufacturing

Semiconductor device

Conductive layers with different thicknesses

Structure and method for FinFET device with source/drain modulation

Integrated circuit with embedded high-density and high-current SRAM...

Isolation structures

Memory chip structure having GAA transistors with different thresho...

Semiconductor devices having gate dielectric layers of varying thic...

Semiconductor structure having both gate-all-around devices and pla...

Semiconductor structure with dielectric fin in memory cell and meth...

SRAM circuits with aligned gate electrodes

Fuse cell structure

Fin-based device having an isolation gate interfacing with a source...

Semiconductor device and method

Semiconductor structure with a bit line in a different configuratio...

Semiconductor device with source/drain via

Structure and method for FinFET device with asymmetric contact

SRAM structures with improved write word line placement

Semiconductor device and manufacturing method thereof

Reducing parasitic capacitance in field-effect transistors

Isolation structure for isolating epitaxially grown source/drain re...

Patents Applicationslast 30 patents

Semiconductor Gate-All-Around Device

Contact Structures for Gate-All-Around Devices and Methods of Formi...

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...

GATE ALL AROUND TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DI...

SEMICONDUCTOR STRUCTURE

GATE-ALL-AROUND HIGH-DENSITY AND HIGH-SPEED SRAM CELLS

Device Structure with Reduced Leakage Current

Dielectric Fins With Different Dielectric Constants and Sizes in Di...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR

Semiconductor Device For Logic and Memory Co-Optimization

SEMICONDUCTOR DEVICE

Multi-Gate Field-Effect Transistors In Integrated Circuits

MEMORY DEVICE

Fin-Like Field Effect Transistors Having High Mobility Strained Cha...

THREE-PORT SRAM CELL AND LAYOUT METHOD

Via Structures

Multi-Gate Device Integration with Separated Fin-Like Field Effect...

Methods for Fabricating FinFETs Having Different Fin Numbers and Co...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INTEGRATED CIRCUIT WITH EMBEDDED HIGH-DENSITY AND HIGH-CURRENT SRAM...

ISOLATION STRUCTURES

Cell Manufacturing

STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION

SEMICONDUCTOR STRUCTURE HAVING BOTH GATE-ALL-AROUND DEVICES AND PLA...

TWO-PORT SRAM CELL STRUCTURE

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

FUSE CELL STRUCTURE