JHONG-SHENG WANG

Person

TAICHUNG CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,825,664
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 11,727,974
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated thermoelectric devices in Fin FET technology
- Patent number 11,631,796
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making fin field effect transistor (FinFET) device
- Patent number 11,616,124
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated thermoelectric devices in Fin FET technology
- Patent number 11,424,399
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,289,538
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assisted write method for magnetic random access memory
- Patent number 11,244,714
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 11,238,911
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,165,012
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 11,107,889
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assisted write method for MRAM testing and field applications
- Patent number 10,916,286
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 10,685,693
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Breakdown resistant semiconductor apparatus and method of making same
- Patent number 10,553,494
- Issue date Feb 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for programming resistive memory cell with AC perturbation A...
- Patent number 10,510,410
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 10,032,869
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for operating the same
- Patent number 9,977,072
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jiaw-Ren Shih
- G01 - MEASURING TESTING
Information Patent Grant
Transistor having gate, first metal-containing material and second...
- Patent number 9,691,894
- Issue date Jun 27, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method of manufacturing the same
- Patent number 9,373,712
- Issue date Jun 21, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of designing a circuit and system for implementing the method
- Patent number 9,317,647
- Issue date Apr 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shyh-Horng Yang
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230335171
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230263073
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20220216269
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220157360
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220052254
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20210376085
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20210241809
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE
- Publication number 20210226012
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20210036055
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200312393
- Publication date Oct 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MAKING BREAKDOWN RESISTANT SEMICONDUCTOR DEVICE
- Publication number 20200176327
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200136018
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS
- Publication number 20200058340
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200020375
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING RESISTIVE MEMORY CELL AND NONVOLATILE MEMORY...
- Publication number 20190147950
- Publication date May 16, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20180350912
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN RESISTANT SEMICONDUCTOR APPARATUS AND METHOD OF MAKING SAME
- Publication number 20180151448
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...
- Publication number 20180053824
- Publication date Feb 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR OPERATING THE SAME
- Publication number 20170153287
- Publication date Jun 1, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- JIAW-REN SHIH
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY
- Publication number 20170012194
- Publication date Jan 12, 2017
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20160247913
- Publication date Aug 25, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160093729
- Publication date Mar 31, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhong-Sheng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DESIGNING A CIRCUIT AND SYSTEM FOR IMPLEMENTING THE METHOD
- Publication number 20150278427
- Publication date Oct 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shyh-Horng YANG
- G06 - COMPUTING CALCULATING COUNTING

JHONG-SHENG WANG

Person

Patents Grantslast 30 patents

Fin field effect transistor (FinFET) device having position-depende...

Magnetic device and magnetic random access memory

Memory device and semiconductor die, and method of fabricating memo...

Method for writing to magnetic random access memory

Magnetic device and magnetic random access memory

Integrated thermoelectric devices in Fin FET technology

Method of making fin field effect transistor (FinFET) device

Integrated thermoelectric devices in Fin FET technology

Memory device and semiconductor die, and method of fabricating memo...

Assisted write method for magnetic random access memory

Method for writing to magnetic random access memory

Magnetic device and magnetic random access memory

Fin field effect transistor (FinFET) device having position-depende...

Assisted write method for MRAM testing and field applications

Method for writing to magnetic random access memory

Breakdown resistant semiconductor apparatus and method of making same

Method for programming resistive memory cell with AC perturbation A...

Fin field effect transistor (FinFET) device having position-depende...

Semiconductor structure and method for operating the same

Transistor having gate, first metal-containing material and second...

Transistor and method of manufacturing the same

Method of designing a circuit and system for implementing the method

Patents Applicationslast 30 patents

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY

METHOD OF MAKING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

METHOD OF MAKING BREAKDOWN RESISTANT SEMICONDUCTOR DEVICE

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

METHOD FOR PROGRAMMING RESISTIVE MEMORY CELL AND NONVOLATILE MEMORY...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

BREAKDOWN RESISTANT SEMICONDUCTOR APPARATUS AND METHOD OF MAKING SAME

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE HAVING POSITION-DEPENDE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR OPERATING THE SAME

INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY

TRANSISTOR

TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD OF DESIGNING A CIRCUIT AND SYSTEM FOR IMPLEMENTING THE METHOD