Jhy-Jyi Sze

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Pixel device on deep trench isolation (DTI) structure for image sensor
- Patent number 12,369,422
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-noise image sensor having stacked semiconductor substrates
- Patent number 12,218,171
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 12,211,876
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with passivation layer for dark current reduction
- Patent number 12,166,054
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite BSI structure and method of manufacturing the same
- Patent number 12,148,782
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 12,148,853
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices for image sensing
- Patent number 12,136,638
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Chia Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance image sensor
- Patent number 12,100,726
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung-Ting Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-containing photodetector and methods of forming the same
- Patent number 12,051,763
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor imaging device having improved dark current performance
- Patent number 12,040,336
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel device on deep trench isolation (DTI) structure for image sensor
- Patent number 11,996,431
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High capacitance MIM device with self aligned spacer
- Patent number 11,984,353
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,948,949
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor and manufacturing method thereof
- Patent number 11,901,393
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device over photodetector pixel sensor
- Patent number 11,901,388
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with passivation layer for dark current reduction
- Patent number 11,848,345
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-containing photodetector and methods of forming the same
- Patent number 11,837,613
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite BSI structure and method of manufacturing the same
- Patent number 11,791,357
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor including silicon over germanium layer
- Patent number 11,742,375
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 11,728,366
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal reflector grounding for noise reduction in light detector
- Patent number 11,705,474
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor image sensor
- Patent number 11,699,718
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wei-Chieh Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance image sensor
- Patent number 11,670,663
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung-Ting Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,600,737
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor imaging device having improved dark current performance
- Patent number 11,538,837
- Issue date Dec 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor image sensor
- Patent number 11,522,002
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-noise image sensor having stacked semiconductor substrates
- Patent number 11,482,556
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,404,460
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pixel device on deep trench isolation (DTI) structure for image sensor
- Patent number 11,393,863
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION
- Publication number 20250048763
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240387766
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME
- Publication number 20240387587
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
- Publication number 20240379720
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES FOR IMAGE SENSING
- Publication number 20240371900
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chia Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240371904
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20240355953
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE IMAGE SENSOR
- Publication number 20240332338
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ting Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE
- Publication number 20240313010
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR
- Publication number 20240282797
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20240204016
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OVER PHOTODETECTOR PIXEL SENSOR
- Publication number 20240162264
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING IMAGE SENSOR
- Publication number 20240145520
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240105877
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240021643
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION
- Publication number 20230387159
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER
- Publication number 20230377957
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20230369360
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR INCLUDING SILICON VERTICALLY STACKED WITH GERMANIUM LAYER
- Publication number 20230352514
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20230335572
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE IMAGE SENSOR
- Publication number 20230253434
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ting Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20230163231
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE
- Publication number 20230109829
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME
- Publication number 20230069164
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20220352223
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
- Publication number 20220336515
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR
- Publication number 20220328537
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Seiji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20220302336
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
- Publication number 20220271080
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- G01 - MEASURING TESTING
Information Patent Application
HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER
- Publication number 20220246469
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsuan-Han Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Jhy-Jyi Sze

Person

Patents Grantslast 30 patents

Pixel device on deep trench isolation (DTI) structure for image sensor

Low-noise image sensor having stacked semiconductor substrates

Extra doped region for back-side deep trench isolation

Image sensor with passivation layer for dark current reduction

Composite BSI structure and method of manufacturing the same

Germanium-based sensor with junction-gate field effect transistor a...

Semiconductor devices for image sensing

High performance image sensor

Germanium-containing photodetector and methods of forming the same

Semiconductor imaging device having improved dark current performance

Pixel device on deep trench isolation (DTI) structure for image sensor

High capacitance MIM device with self aligned spacer

Vertical gate field effect transistor

Image sensor and manufacturing method thereof

Device over photodetector pixel sensor

Germanium-based sensor with junction-gate field effect transistor a...

Image sensor with passivation layer for dark current reduction

Germanium-containing photodetector and methods of forming the same

Composite BSI structure and method of manufacturing the same

Image sensor including silicon over germanium layer

Extra doped region for back-side deep trench isolation

Metal reflector grounding for noise reduction in light detector

Semiconductor image sensor

High performance image sensor

Germanium-based sensor with junction-gate field effect transistor a...

Semiconductor imaging device having improved dark current performance

Method for forming semiconductor image sensor

Low-noise image sensor having stacked semiconductor substrates

Vertical gate field effect transistor

Pixel device on deep trench isolation (DTI) structure for image sensor

Patents Applicationslast 30 patents

IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME

LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES

SEMICONDUCTOR DEVICES FOR IMAGE SENSING

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

HIGH PERFORMANCE IMAGE SENSOR

SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE

PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR

VERTICAL GATE FIELD EFFECT TRANSISTOR

DEVICE OVER PHOTODETECTOR PIXEL SENSOR

METHODS FOR FABRICATING IMAGE SENSOR

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION

HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

IMAGE SENSOR INCLUDING SILICON VERTICALLY STACKED WITH GERMANIUM LAYER

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

HIGH PERFORMANCE IMAGE SENSOR

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE

SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME

VERTICAL GATE FIELD EFFECT TRANSISTOR

LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES

PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

HIGH CAPACITANCE MIM DEVICE WITH SELF ALIGNED SPACER