Ji-Feng Ying

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 12,302,587
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 12,300,293
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 12,082,511
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Baohua Niu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 12,075,631
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction (MTJ) element with an amorphous buffer...
- Patent number 12,029,046
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,842,757
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,825,664
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for measuring magnetic field strength
- Patent number 11,762,046
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baohua Niu
- G01 - MEASURING TESTING
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 11,727,974
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,672,185
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus and method for metrology
- Patent number 11,525,668
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,527,275
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,374,169
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baohua Niu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 11,289,538
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assisted write method for magnetic random access memory
- Patent number 11,244,714
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 11,238,911
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 11,165,012
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunneling junction (MTJ) element with an amorphous buffer...
- Patent number 11,088,201
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,004,901
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Assisted write method for MRAM testing and field applications
- Patent number 10,916,286
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for metrology
- Patent number 10,883,820
- Issue date Jan 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baohua Niu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic detection circuit, MRAM and operation method thereof
- Patent number 10,868,079
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for memory device testing and field applications
- Patent number 10,861,574
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Baohua Niu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for measuring magnetic field strength
- Patent number 10,753,990
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baohua Niu
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic random access memory
- Patent number 10,727,401
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baohua Niu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 10,685,693
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic detection circuit, MRAM and operation method thereof
- Patent number 10,672,832
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 10,541,269
- Issue date Jan 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20240373649
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF MANUFACTURING MAGNETIC RANDOM ACCESS MEMORY, AND METHODS...
- Publication number 20240365683
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Baohua NIU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS
- Publication number 20240324244
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20240040801
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230335171
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230269951
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20230263073
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230109928
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220336730
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Baohua NIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20220216269
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220157360
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220052254
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...
- Publication number 20210359002
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20210265424
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20210241809
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR METROLOGY
- Publication number 20210148695
- Publication date May 20, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
- Publication number 20210036055
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR MEASURING MAGNETIC FIELD STRENGTH
- Publication number 20200386832
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Baohua NIU
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200357986
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Baohua NIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200312393
- Publication date Oct 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF
- Publication number 20200286951
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20200152701
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200136018
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20200098408
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS
- Publication number 20200058340
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20200020375
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...
- Publication number 20200006425
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20190393265
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY

Ji-Feng Ying

Person

Patents Grantslast 30 patents

Memory device and semiconductor die, and method of fabricating memo...

Method for writing to magnetic random access memory

Magnetic random access memory

Magnetic random access memory and manufacturing method thereof

Magnetic device and magnetic random access memory

Magnetic tunneling junction (MTJ) element with an amorphous buffer...

Crystal seed layer for magnetic random access memory (MRAM)

Memory device and semiconductor die, and method of fabricating memo...

Method and apparatus for measuring magnetic field strength

Method for writing to magnetic random access memory

Magnetic device and magnetic random access memory

Magnetic random access memory and manufacturing method thereof

Apparatus and method for metrology

Crystal seed layer for magnetic random access memory (MRAM)

Magnetic random access memory

Memory device and semiconductor die, and method of fabricating memo...

Assisted write method for magnetic random access memory

Method for writing to magnetic random access memory

Magnetic device and magnetic random access memory

Magnetic tunneling junction (MTJ) element with an amorphous buffer...

Magnetic random access memory and manufacturing method thereof

Assisted write method for MRAM testing and field applications

Apparatus and method for metrology

Magnetic detection circuit, MRAM and operation method thereof

Apparatus for memory device testing and field applications

Method and apparatus for measuring magnetic field strength

Magnetic random access memory

Method for writing to magnetic random access memory

Magnetic detection circuit, MRAM and operation method thereof

Magnetic random access memory and manufacturing method thereof

Patents Applicationslast 30 patents

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

METHODS OF MANUFACTURING MAGNETIC RANDOM ACCESS MEMORY, AND METHODS...

MEMORY CELL WITH A BUFFER LAYER AND ITS FABRICATION PROCESS

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MAGNETIC RANDOM ACCESS MEMORY

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY

APPARATUS AND METHOD FOR METROLOGY

MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...

METHOD AND APPARATUS FOR MEASURING MAGNETIC FIELD STRENGTH

MAGNETIC RANDOM ACCESS MEMORY

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS

METHOD FOR WRITING TO MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC TUNNELING JUNCTION (MTJ) ELEMENT WITH AN AMORPHOUS BUFFER...

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF