Ji-Hyoung Yoo

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral DMOS having reduced lateral size
- Patent number 11,205,722
- Issue date Dec 21, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of self-aligned DMOS body pickup
- Patent number 11,069,777
- Issue date Jul 20, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with sinker link
- Patent number 11,049,957
- Issue date Jun 29, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating LDMOS with self-aligned body
- Patent number 10,090,409
- Issue date Oct 2, 2018
- Monolithic Power Systems, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction semiconductor device and method for manufacturing...
- Patent number 10,090,200
- Issue date Oct 2, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating LDMOS with reduced source region
- Patent number 9,941,171
- Issue date Apr 10, 2018
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating LDMOS using CMP technology
- Patent number 9,935,176
- Issue date Apr 3, 2018
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of selectively etched DMOS body pickup
- Patent number 9,893,170
- Issue date Feb 13, 2018
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS and the method for forming thereof
- Patent number 9,893,146
- Issue date Feb 13, 2018
- Monolithic Power Systems, Inc.
- Eric Braun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes with mesh style region and associated methods
- Patent number 9,583,561
- Issue date Feb 28, 2017
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low-cost isolated resurf LDMOS and associate...
- Patent number 9,502,251
- Issue date Nov 22, 2016
- Monolithic Power Systems, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage PMOS and the method for forming thereof
- Patent number 9,219,146
- Issue date Dec 22, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High side DMOS and the method for forming thereof
- Patent number 9,159,795
- Issue date Oct 13, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with short channel and associated fabrication method
- Patent number 9,087,774
- Issue date Jul 21, 2015
- Monolithic Power Systems, Inc.
- Jeesung Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual gate insulation layers and semiconductor de...
- Patent number 8,916,439
- Issue date Dec 23, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and the associated method of manu...
- Patent number 8,916,913
- Issue date Dec 23, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage and/or low turn-on voltage Schottky diode
- Patent number 8,809,988
- Issue date Aug 19, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage high side DMOS and the method for forming thereof
- Patent number 8,772,867
- Issue date Jul 8, 2014
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes with dual guard ring regions and associated methods
- Patent number 8,749,014
- Issue date Jun 10, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage NMOS with low on resistance and associated methods of...
- Patent number 8,198,679
- Issue date Jun 12, 2012
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor (LDMOS) device wi...
- Patent number 7,635,621
- Issue date Dec 22, 2009
- Micrel, Inc.
- Steve McCormack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate layouts for transistors
- Patent number 7,265,041
- Issue date Sep 4, 2007
- Micrel, Inc.
- Schyi-yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triply implanted complementary bipolar transistors
- Patent number 6,838,350
- Issue date Jan 4, 2005
- Micrel, Inc.
- Martin E. Garnett
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCHOTTKY CONTACT REGION FOR HOLE INJECTION SUPPRESSION
- Publication number 20210359124
- Publication date Nov 18, 2021
- Monolithic Power Systems, Inc.
- Eric Braun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...
- Publication number 20210193805
- Publication date Jun 24, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DMOS HAVING REDUCED LATERAL SIZE
- Publication number 20210020779
- Publication date Jan 21, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING LDMOS WITH SELF-ALIGNED BODY
- Publication number 20180374949
- Publication date Dec 27, 2018
- Monolithic Power Systems, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING LDMOS WITH SELF-ALIGNED BODY
- Publication number 20180090613
- Publication date Mar 29, 2018
- Monolithic Power Systems, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20170186648
- Publication date Jun 29, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20170170312
- Publication date Jun 15, 2017
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODES WITH MESH STYLE REGION AND ASSOCIATED METHODS
- Publication number 20160284793
- Publication date Sep 29, 2016
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE PMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20150187931
- Publication date Jul 2, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH IMPROVED AVALANCHE ENERGY AND ASSOCIATED FABRICAT...
- Publication number 20150162441
- Publication date Jun 11, 2015
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH SHORT CHANNEL AND ASSOCIATED FABRICATION METHOD
- Publication number 20150084126
- Publication date Mar 26, 2015
- Monolithic Power Systems, Inc.
- Jeesung Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH IMPROVED AVALANCHE ENERGY AND ASSOCIATED FABRICAT...
- Publication number 20150001620
- Publication date Jan 1, 2015
- Monolithic Power Systems, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20150001619
- Publication date Jan 1, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20140151792
- Publication date Jun 5, 2014
- Monolithic Power Systems, Inc.
- Ji-Young Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DUAL GATE INSULATION LAYERS AND SEMICONDUCTOR DE...
- Publication number 20140024186
- Publication date Jan 23, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND THE ASSOCIATED METHOD OF MANU...
- Publication number 20140015017
- Publication date Jan 16, 2014
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODES WITH DUAL GUARD RING REGIONS AND ASSOCIATED METHODS
- Publication number 20120056294
- Publication date Mar 8, 2012
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE AND/OR LOW TURN-ON VOLTAGE SCHOTTKY DIODE
- Publication number 20110156199
- Publication date Jun 30, 2011
- Monolithic Power Systems, Incc
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE NMOS WITH LOW ON RESISTANCE AND ASSOCIATED METHODS OF...
- Publication number 20100301414
- Publication date Dec 2, 2010
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral double-diffused metal oxide semiconductor (LDMOS) device wi...
- Publication number 20070246771
- Publication date Oct 25, 2007
- Steve McCormack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate layouts for transistors
- Publication number 20070138549
- Publication date Jun 21, 2007
- Schyi-yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Zener zap diode structure compatible with tungsten plug technology
- Publication number 20060065891
- Publication date Mar 30, 2006
- Steve McCormack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triply implanted complementary bipolar transistors
- Publication number 20040212043
- Publication date Oct 28, 2004
- Martin E. Garnett
- H01 - BASIC ELECTRIC ELEMENTS

Ji-Hyoung Yoo

Person

Patents Grantslast 30 patents

Lateral DMOS having reduced lateral size

Manufacturing method of self-aligned DMOS body pickup

LDMOS device with sinker link

Method for fabricating LDMOS with self-aligned body

Bipolar junction semiconductor device and method for manufacturing...

Method for fabricating LDMOS with reduced source region

Method for fabricating LDMOS using CMP technology

Manufacturing method of selectively etched DMOS body pickup

Lateral DMOS and the method for forming thereof

Schottky diodes with mesh style region and associated methods

Method for fabricating low-cost isolated resurf LDMOS and associate...

High voltage PMOS and the method for forming thereof

High side DMOS and the method for forming thereof

LDMOS device with short channel and associated fabrication method

Method for forming dual gate insulation layers and semiconductor de...

High voltage semiconductor device and the associated method of manu...

Low leakage and/or low turn-on voltage Schottky diode

High voltage high side DMOS and the method for forming thereof

Schottky diodes with dual guard ring regions and associated methods

High voltage NMOS with low on resistance and associated methods of...

Lateral double-diffused metal oxide semiconductor (LDMOS) device wi...

Gate layouts for transistors

Triply implanted complementary bipolar transistors

Patents Applicationslast 30 patents

SCHOTTKY CONTACT REGION FOR HOLE INJECTION SUPPRESSION

LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...

LATERAL DMOS HAVING REDUCED LATERAL SIZE

METHOD FOR FABRICATING LDMOS WITH SELF-ALIGNED BODY

METHOD FOR FABRICATING LDMOS WITH SELF-ALIGNED BODY

BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF

SCHOTTKY DIODES WITH MESH STYLE REGION AND ASSOCIATED METHODS

HIGH VOLTAGE PMOS AND THE METHOD FOR FORMING THEREOF

LDMOS DEVICE WITH IMPROVED AVALANCHE ENERGY AND ASSOCIATED FABRICAT...

LDMOS DEVICE WITH SHORT CHANNEL AND ASSOCIATED FABRICATION METHOD

LDMOS DEVICE WITH IMPROVED AVALANCHE ENERGY AND ASSOCIATED FABRICAT...

HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF

HIGH VOLTAGE HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF

METHOD FOR FORMING DUAL GATE INSULATION LAYERS AND SEMICONDUCTOR DE...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND THE ASSOCIATED METHOD OF MANU...

SCHOTTKY DIODES WITH DUAL GUARD RING REGIONS AND ASSOCIATED METHODS

LOW LEAKAGE AND/OR LOW TURN-ON VOLTAGE SCHOTTKY DIODE

HIGH VOLTAGE NMOS WITH LOW ON RESISTANCE AND ASSOCIATED METHODS OF...

Lateral double-diffused metal oxide semiconductor (LDMOS) device wi...

Gate layouts for transistors

Zener zap diode structure compatible with tungsten plug technology

Triply implanted complementary bipolar transistors