Ji-Soo Park

Person

Andover, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth of crystalline material
- Patent number 10,961,639
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication and structures of crystalline material
- Patent number 9,984,872
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 9,934,967
- Issue date Apr 3, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jennifer M. Hydrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 9,818,819
- Issue date Nov 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid state lighting devices with selected thermal expansion and/or...
- Patent number 9,806,230
- Issue date Oct 31, 2017
- QROMIS, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of crystalline material
- Patent number 9,365,949
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 9,318,325
- Issue date Apr 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid state lighting devices with selected thermal expansion and/or...
- Patent number 9,166,107
- Issue date Oct 20, 2015
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 8,847,279
- Issue date Sep 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth of crystalline material
- Patent number 8,822,248
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices with selected thermal expansion and/or...
- Patent number 8,729,563
- Issue date May 20, 2014
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices with selected thermal expansion and/or...
- Patent number 8,436,362
- Issue date May 7, 2013
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,384,196
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Epitaxial growth of crystalline material
- Patent number 8,183,667
- Issue date May 22, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 8,173,551
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,034,697
- Issue date Oct 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
Fabrication and Structures of Crystalline Material
- Publication number 20170133222
- Publication date May 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Growth of Crystalline Material
- Publication number 20160265139
- Publication date Sep 15, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20160218173
- Publication date Jul 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...
- Publication number 20160049549
- Publication date Feb 18, 2016
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...
- Publication number 20150008441
- Publication date Jan 8, 2015
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20140342536
- Publication date Nov 20, 2014
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Growth of Crystalline Material
- Publication number 20140332850
- Publication date Nov 13, 2014
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20130134480
- Publication date May 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer M. Hydrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...
- Publication number 20130062615
- Publication date Mar 14, 2013
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20120199876
- Publication date Aug 9, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Growth of Crystalline Material
- Publication number 20120098034
- Publication date Apr 26, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20120068226
- Publication date Mar 22, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer Hydrick
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...
- Publication number 20110121310
- Publication date May 26, 2011
- Micron Technology, Inc.
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20100216277
- Publication date Aug 26, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
FABRICATION AND STRUCTURES OF CRYSTALLINE MATERIAL
- Publication number 20100072515
- Publication date Mar 25, 2010
- AmberWave Systems Corporation
- Ji-Soo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAZIAL GROWTH OF CRYSTALLINE MATERIAL
- Publication number 20090321882
- Publication date Dec 31, 2009
- AmberWave Systems Corporation
- Ji-Soo Park
- C30 - CRYSTAL GROWTH
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20080099785
- Publication date May 1, 2008
- AmberWave Systems Coporation
- Jie Bai
- C30 - CRYSTAL GROWTH

Ji-Soo Park

Person

Patents Grantslast 30 patents

Epitaxial growth of crystalline material

Fabrication and structures of crystalline material

Formation of devices by epitaxial layer overgrowth

Defect reduction using aspect ratio trapping

Solid state lighting devices with selected thermal expansion and/or...

Epitaxial growth of crystalline material

Defect reduction using aspect ratio trapping

Solid state lighting devices with selected thermal expansion and/or...

Defect reduction using aspect ratio trapping

Epitaxial growth of crystalline material

Solid state lighting devices with selected thermal expansion and/or...

Solid state lighting devices with selected thermal expansion and/or...

Formation of devices by epitaxial layer overgrowth

Epitaxial growth of crystalline material

Defect reduction using aspect ratio trapping

Formation of devices by epitaxial layer overgrowth

Patents Applicationslast 30 patents

Fabrication and Structures of Crystalline Material

Epitaxial Growth of Crystalline Material

Defect Reduction Using Aspect Ratio Trapping

SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...

SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...

Defect Reduction Using Aspect Ratio Trapping

Epitaxial Growth of Crystalline Material

Formation of Devices by Epitaxial Layer Overgrowth

SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...

Defect Reduction Using Aspect Ratio Trapping

Epitaxial Growth of Crystalline Material

Formation of Devices by Epitaxial Layer Overgrowth

SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR...

Formation of Devices by Epitaxial Layer Overgrowth

FABRICATION AND STRUCTURES OF CRYSTALLINE MATERIAL

EPITAZIAL GROWTH OF CRYSTALLINE MATERIAL

Defect Reduction Using Aspect Ratio Trapping