Ji-Yin Tsai

Person

Zhudong Township, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,159,925
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structure and methods of forming such
- Patent number 11,862,709
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 11,616,133
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,437,497
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 11,316,030
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium source/drain regions
- Patent number 9,887,290
- Issue date Feb 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ doping of arsenic for source and drain epitaxy
- Patent number 8,962,400
- Issue date Feb 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device having SiGe substrate, interfacial layer and h...
- Patent number 8,878,302
- Issue date Nov 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,866,188
- Issue date Oct 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,785,285
- Issue date Jul 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...
- Publication number 20250048716
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240371983
- Publication date Nov 7, 2024
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
- Publication number 20240105814
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND MULTI-CHANNEL DEVICES WITH ANTI-PUNCH-THROUGH FEATURES
- Publication number 20230197820
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min Jiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220367690
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inner Spacer Structure and Methods of Forming Such
- Publication number 20220352349
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Undoped Region Under Source/Drain And Method Forming Same
- Publication number 20220336640
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method
- Publication number 20220262926
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20210257479
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20200006533
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Doping of Arsenic for Source and Drain Epitaxy
- Publication number 20150137198
- Publication date May 21, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20140312431
- Publication date Oct 23, 2014
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having SiGe Substrate, Interfacial Layer and H...
- Publication number 20140151819
- Publication date Jun 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20130234203
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Doping of Arsenic for Source and Drain Epitaxy
- Publication number 20130011983
- Publication date Jan 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Ji-Yin Tsai

Person

Patents Grantslast 30 patents

Methods of forming of inner spacer structure using semiconductor ma...

Semiconductor device and method

Method for forming an undoped region under a source/drain

Inner spacer structure and methods of forming such

Fin field-effect transistor device and method

Semiconductor device and method

Fin field-effect transistor device and method

Silicon germanium source/drain regions

In-situ doping of arsenic for source and drain epitaxy

Semiconductor device having SiGe substrate, interfacial layer and h...

Semiconductor devices and methods of manufacture thereof

Semiconductor devices and methods of manufacture thereof

Patents Applicationslast 30 patents

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICES

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH

METHOD AND MULTI-CHANNEL DEVICES WITH ANTI-PUNCH-THROUGH FEATURES

Semiconductor Device and Method

Inner Spacer Structure and Methods of Forming Such

Undoped Region Under Source/Drain And Method Forming Same

Fin Field-Effect Transistor Device and Method

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

Semiconductor Device and Method

In-Situ Doping of Arsenic for Source and Drain Epitaxy

Semiconductor Devices and Methods of Manufacture Thereof

Semiconductor Device Having SiGe Substrate, Interfacial Layer and H...

Semiconductor Devices and Methods of Manufacture Thereof

In-Situ Doping of Arsenic for Source and Drain Epitaxy