Jia He

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,903,195
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,792,989
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,574,919
- Issue date Feb 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,222,903
- Issue date Jan 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reducing defects in semiconductor plug in three-dimensi...
- Patent number 11,205,662
- Issue date Dec 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Fandong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 10,804,283
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reducing defects in semiconductor plug in three-dimensi...
- Patent number 10,784,279
- Issue date Sep 22, 2020
- Yangtze Memory Technologies Co., Ltd.
- Fandong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 10,651,192
- Issue date May 12, 2020
- Yangtze Memory Technologies Co, Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240107757
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230413560
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20230157020
- Publication date May 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20220059564
- Publication date Feb 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20210151458
- Publication date May 20, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REDUCING DEFECTS IN SEMICONDUCTOR PLUG IN THREE-DIMENSI...
- Publication number 20200381451
- Publication date Dec 3, 2020
- Yangtze Memory Technologies Co., Ltd.
- Fandong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243557
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REDUCING DEFECTS IN SEMICONDUCTOR PLUG IN THREE-DIMENSI...
- Publication number 20200111808
- Publication date Apr 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Fandong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043883
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20190013327
- Publication date Jan 10, 2019
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Openings layout of three-dimensional memory device

Word line structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Word line structure of three-dimensional memory device

Methods for reducing defects in semiconductor plug in three-dimensi...

Openings layout of three-dimensional memory device

Methods for reducing defects in semiconductor plug in three-dimensi...

Word line structure of three-dimensional memory device

Patents Applicationslast 30 patents

OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

METHODS FOR REDUCING DEFECTS IN SEMICONDUCTOR PLUG IN THREE-DIMENSI...

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

METHODS FOR REDUCING DEFECTS IN SEMICONDUCTOR PLUG IN THREE-DIMENSI...

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device