Jiajia Wu

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices having isolation structure for sou...
- Patent number 11,990,506
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming three-dimensional memory device with sacrificial...
- Patent number 11,937,427
- Issue date Mar 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Three-dimensional memory device with reduced local stress
- Patent number 11,800,707
- Issue date Oct 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Three-dimensional memory devices having isolation structure for sou...
- Patent number 11,711,921
- Issue date Jul 25, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215238
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...
- Publication number 20240194606
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME
- Publication number 20240170389
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20230301106
- Publication date Sep 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND ITS FABRICATION METHOD
- Publication number 20230148055
- Publication date May 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20220077181
- Publication date Mar 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20220077283
- Publication date Mar 10, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jiajia Wu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305274
- Publication date Sep 30, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305277
- Publication date Sep 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory devices having isolation structure for sou...

Method for forming three-dimensional memory device with sacrificial...

Three-dimensional memory device with reduced local stress

Three-dimensional memory devices having isolation structure for sou...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...

THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

THREE-DIMENSIONAL MEMORY AND ITS FABRICATION METHOD

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME