Jiakun Wang

Person

Hangzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Trench MOSFET and method for manufacturing the same
- Patent number 12,176,406
- Issue date Dec 24, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-type MOSFET and method for manufacturing the same
- Patent number 12,176,432
- Issue date Dec 24, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 11,894,440
- Issue date Feb 6, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET and method for manufacturing the same
- Patent number 11,670,502
- Issue date Jun 6, 2023
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for manufacturing the same
- Patent number 11,424,344
- Issue date Aug 23, 2022
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240234536
- Publication date Jul 11, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240136421
- Publication date Apr 25, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...
- Publication number 20240079445
- Publication date Mar 7, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH-TYPE MOSFET
- Publication number 20230335621
- Publication date Oct 19, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION DEVICE
- Publication number 20230282696
- Publication date Sep 7, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICE
- Publication number 20230215931
- Publication date Jul 6, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Xiao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-TYPE POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230215943
- Publication date Jul 6, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Xiao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20230207684
- Publication date Jun 29, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20230207685
- Publication date Jun 29, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION SEMICONDUCTOR DEVICE WITH ENLARGED PROCESS WINDOW FO...
- Publication number 20230178591
- Publication date Jun 8, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- Lvqiang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230170401
- Publication date Jun 1, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- He Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VDMOS DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230124282
- Publication date Apr 20, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- He Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230093383
- Publication date Mar 23, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE POWER MOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230065526
- Publication date Mar 2, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220181484
- Publication date Jun 9, 2022
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20220130981
- Publication date Apr 28, 2022
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220093768
- Publication date Mar 24, 2022
- Hangzhou Silcon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR D...
- Publication number 20220052176
- Publication date Feb 17, 2022
- HANGZHOU CHUANGQIN SENSOR TECHNOLOGY CO., LTD.
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220037522
- Publication date Feb 3, 2022
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210335605
- Publication date Oct 28, 2021
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210184009
- Publication date Jun 17, 2021
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210159324
- Publication date May 27, 2021
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Jiakun Wang

Person

Patents Grantslast 30 patents

Trench MOSFET and method for manufacturing the same

Trench-type MOSFET and method for manufacturing the same

Silicon carbide MOSFET device and manufacturing method thereof

SiC MOSFET and method for manufacturing the same

Trench MOSFET and method for manufacturing the same

Patents Applicationslast 30 patents

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...

METHOD FOR MANUFACTURING TRENCH-TYPE MOSFET

SUPER-JUNCTION DEVICE

MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICE

TRENCH-TYPE POWER DEVICE AND MANUFACTURING METHOD THEREOF

SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF

SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF

SUPER-JUNCTION SEMICONDUCTOR DEVICE WITH ENLARGED PROCESS WINDOW FO...

METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

VDMOS DEVICE AND METHOD FOR FABRICATING THE SAME

SUPER-JUNCTION DEVICE AND MANUFACTURING METHOD THEREOF

SPLIT-GATE POWER MOS DEVICE AND MANUFACTURING METHOD THEREOF

TRENCH-TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME

LDMOS TRANSISTOR AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR D...

TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME

SIC MOSFET AND METHOD FOR MANUFACTURING THE SAME

TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME

TRENCH MOSFET AND METHOD FOR MANUFACTURING THE SAME