Jian-Jou LIAN

Person

TAINAN CITY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field-effect transistor with a gate structure having a dielectr...
- Patent number 12,183,823
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,080,556
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,996,470
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,990,339
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,978,801
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modification layer for conductive feature formation
- Patent number 11,942,362
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,901,441
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,855,193
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning method and structures resulting therefrom
- Patent number 11,848,239
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing substrate
- Patent number 11,817,330
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a gate structure hav...
- Patent number 11,749,753
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,735,425
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,735,426
- Issue date Aug 22, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modification layer for conductive feature formation
- Patent number 11,600,521
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,588,041
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,522,083
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and method for processing substrate
- Patent number 11,398,391
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Yuan Wang
- B08 - CLEANING
Information Patent Grant
Chemical composition for tri-layer removal
- Patent number 11,378,882
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Min Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,309,190
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,309,185
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,227,940
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,201,084
- Issue date Dec 14, 2021
- TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,101,135
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,081,350
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,867,803
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Wen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical composition for tri-layer removal
- Patent number 10,761,423
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Min Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modification layer for conductive feature formation
- Patent number 10,699,944
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etch chemistry for selective silicon etch
- Patent number 10,676,668
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Neng-Jye Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 10,529,572
- Issue date Jan 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 10,483,108
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240282575
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240258428
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION
- Publication number 20240194522
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20240105818
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM
- Publication number 20240063060
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE
- Publication number 20230411206
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Neng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230369494
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- CHUN-NENG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230352306
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20230327002
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface Modification Layer for Conductive Feature Formation
- Publication number 20230207384
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230187543
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230027261
- Publication date Jan 26, 2023
- TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20220359741
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd,
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor and Method of Forming The Same
- Publication number 20220359713
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING SUBSTRATE
- Publication number 20220359235
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-YUAN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220359743
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemical Composition for Tri-Layer Removal
- Publication number 20220334473
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Min Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220246442
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220189776
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220140107
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220115519
- Publication date Apr 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM
- Publication number 20220013412
- Publication date Jan 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210391455
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Neng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210384034
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210366704
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
- Publication number 20210366737
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-YUAN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210335613
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20210273073
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210225660
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210119034
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS

Jian-Jou LIAN

Person

Patents Grantslast 30 patents

Fin field-effect transistor with a gate structure having a dielectr...

Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

Semiconductor device and method of manufacture

Fin field-effect transistor device and method of forming the same

Surface modification layer for conductive feature formation

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Patterning method and structures resulting therefrom

Method for processing substrate

Methods of forming a semiconductor device with a gate structure hav...

Fin field-effect transistor and method of forming the same

Semiconductor device and method of manufacture

Surface modification layer for conductive feature formation

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Substrate processing apparatus and method for processing substrate

Chemical composition for tri-layer removal

Semiconductor device and method of manufacture

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

Semiconductor device and method of manufacture

Semiconductor device and method of manufacture

Semiconductor device and method

Chemical composition for tri-layer removal

Surface modification layer for conductive feature formation

Wet etch chemistry for selective silicon etch

Semiconductor device and method of manufacture

Semiconductor device and method of manufacture

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION

Fin Field-Effect Transistor Device and Method of Forming the Same

PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM

METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

METHOD OF FORMING SEMICONDUCTOR DEVICE

Surface Modification Layer for Conductive Feature Formation

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Fin Field-Effect Transistor Device and Method of Forming the Same

Fin Field-Effect Transistor and Method of Forming The Same

METHOD FOR PROCESSING SUBSTRATE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Chemical Composition for Tri-Layer Removal

Semiconductor Device and Method of Manufacture

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Semiconductor Device and Method of Manufacture

Semiconductor Device and Method of Manufacture

SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Fin Field-Effect Transistor Device and Method of Forming the Same

Semiconductor Device and Method of Manufacture

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME