Jian Wang

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated planar-trench gate power MOSFET
- Patent number 11,728,423
- Issue date Aug 15, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas dopant doped deep trench super junction high voltage MOSFET
- Patent number 11,569,345
- Issue date Jan 31, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,031,465
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for precisely aligning backside pattern to frontside pattern...
- Patent number 10,833,021
- Issue date Nov 10, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT superjunction MOSFET structure
- Patent number 10,644,102
- Issue date May 5, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECESS POLY ESD DIODE FOR POWER MOSFET
- Publication number 20240421147
- Publication date Dec 19, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PLANAR-TRENCH GATE POWER MOSFET
- Publication number 20220344505
- Publication date Oct 27, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS DOPANT DOPED DEEP TRENCH SUPER JUNCTION HIGH VOLTAGE MOSFET
- Publication number 20220165843
- Publication date May 26, 2022
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20210273046
- Publication date Sep 2, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190273131
- Publication date Sep 5, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE
- Publication number 20190206988
- Publication date Jul 4, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190006461
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRECISELY ALIGNING BACKSIDE PATTERN TO FRONTSIDE PATTERN...
- Publication number 20190006285
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device incorporating epitaxial layer field stop zone

Integrated planar-trench gate power MOSFET

Gas dopant doped deep trench super junction high voltage MOSFET

Semiconductor device incorporating epitaxial layer field stop zone

Method for precisely aligning backside pattern to frontside pattern...

SGT superjunction MOSFET structure

Patents Applicationslast 30 patents

RECESS POLY ESD DIODE FOR POWER MOSFET

INTEGRATED PLANAR-TRENCH GATE POWER MOSFET

GAS DOPANT DOPED DEEP TRENCH SUPER JUNCTION HIGH VOLTAGE MOSFET

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR PRECISELY ALIGNING BACKSIDE PATTERN TO FRONTSIDE PATTERN...