Jian Zhu

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with assisted magnetic recording comprising an electr...
- Patent number 11,657,835
- Issue date May 23, 2023
- Western Digital Technologies, Inc.
- Zhigang Bai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with assisted magnetic recording
- Patent number 11,615,806
- Issue date Mar 28, 2023
- Western Digital Technologies, Inc.
- Zhigang Bai
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,573,270
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 11,563,170
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Resonance rotating spin-transfer torque memory device
- Patent number 11,387,405
- Issue date Jul 12, 2022
- Carnegie Mellon University
- Jian-Gang Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with assisted magnetic recording
- Patent number 11,373,675
- Issue date Jun 28, 2022
- Western Digital Technologies, Inc.
- Zhigang Bai
- G11 - INFORMATION STORAGE
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 11,316,098
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,054,471
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic head with assisted magnetic recording and method of making...
- Patent number 11,017,801
- Issue date May 25, 2021
- Western Digital Technologies, Inc.
- Venkatesh Chembrolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with assisted magnetic recording and method of making...
- Patent number 11,017,802
- Issue date May 25, 2021
- Western Digital Technologies, Inc.
- Venkatesh Chembrolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and circuits for programming STT-MRAM cells for reducing bac...
- Patent number 10,978,124
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,957,851
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic head with current assisted magnetic recording and method o...
- Patent number 10,896,690
- Issue date Jan 19, 2021
- SanDisk Technologies LLC
- Zhigang Bai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with current assisted magnetic recording and method o...
- Patent number 10,891,974
- Issue date Jan 12, 2021
- SanDisk Technologies LLC
- Venkatesh Chembrolu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with assisted magnetic recording and method of making...
- Patent number 10,891,975
- Issue date Jan 12, 2021
- SanDiskTechnologies LLC.
- Zhigang Bai
- G11 - INFORMATION STORAGE
Information Patent Grant
Initialization process for magnetic random access memory (MRAM) pro...
- Patent number 10,867,651
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Write heads configured to redirect current
- Patent number 10,861,485
- Issue date Dec 8, 2020
- Western Digital Technologies, Inc.
- Muhammad Asif Bashir
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Write heads configured to redirect current
- Patent number 10,777,219
- Issue date Sep 15, 2020
- Western Digital Technologies, Inc.
- Muhammad Asif Bashir
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 10,763,428
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and circuits for programming STT-MRAM cells for reducing ba...
- Patent number 10,699,765
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride capping layer for spin torque transfer (STT)-magnetoresisti...
- Patent number 10,665,773
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...
- Publication number 20240381780
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...
- Publication number 20220238135
- Publication date Jul 28, 2022
- Western Digital Technologies, Inc.
- Zhigang BAI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...
- Publication number 20220208220
- Publication date Jun 30, 2022
- Western Digital Technologies, Inc.
- Zhigang BAI
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20210325460
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Reduction of Barrier Resistance X Area (RA) Product and Protection...
- Publication number 20210234092
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...
- Publication number 20210125631
- Publication date Apr 29, 2021
- Western Digital Technologies, Inc.
- Zhigang BAI
- G11 - INFORMATION STORAGE
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRITE HEADS CONFIGURED TO REDIRECT CURRENT
- Publication number 20200381011
- Publication date Dec 3, 2020
- Western Digital Technologies, Inc.
- Muhammad ASIF BASHIR
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...
- Publication number 20200381012
- Publication date Dec 3, 2020
- SANDISK TECHNOLOGIES LLC
- Venkatesh CHEMBROLU
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...
- Publication number 20200327918
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20200144487
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20200144494
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20200144486
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20200116790
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190311754
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Jen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20190257881
- Publication date Aug 22, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...
- Publication number 20190237661
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20190189911
- Publication date Jun 20, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANCE ROTATING SPIN-TRANSFER TORQUE MEMORY DEVICE
- Publication number 20190165255
- Publication date May 30, 2019
- Carnegie Mellon University
- Jian-Gang Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Initialization Process for Magnetic Random Access Memory (MRAM) Pro...
- Publication number 20190156876
- Publication date May 23, 2019
- HEADWAY TECHNOLOGIES, INC.
- Yuan-Jen Lee
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Magnetic head with assisted magnetic recording comprising an electr...

Magnetic head with assisted magnetic recording

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Resonance rotating spin-transfer torque memory device

Magnetic head with assisted magnetic recording

High thermal stability by doping of oxide capping layer for spin to...

Magnetic tunnel junction with low defect rate after high temperatur...

Electrical testing apparatus for spintronics devices

Magnetic head with assisted magnetic recording and method of making...

Magnetic head with assisted magnetic recording and method of making...

Method and circuits for programming STT-MRAM cells for reducing bac...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Magnetic head with current assisted magnetic recording and method o...

Magnetic head with current assisted magnetic recording and method o...

Magnetic head with assisted magnetic recording and method of making...

Initialization process for magnetic random access memory (MRAM) pro...

Write heads configured to redirect current

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Write heads configured to redirect current

Magnetic tunnel junction with low defect rate after high temperatur...

Methods and circuits for programming STT-MRAM cells for reducing ba...

Nitride capping layer for spin torque transfer (STT)-magnetoresisti...

Maintaining coercive field after high temperature anneal for magnet...

Patents Applicationslast 30 patents

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...

MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...

Electrical Testing Apparatus for Spintronics Devices

Reduction of Barrier Resistance X Area (RA) Product and Protection...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

WRITE HEADS CONFIGURED TO REDIRECT CURRENT

MAGNETIC HEAD WITH ASSISTED MAGNETIC RECORDING AND METHOD OF MAKING...

Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Electrical Testing Apparatus for Spintronics Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...

Electrical Testing Apparatus for Spintronics Devices

Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

RESONANCE ROTATING SPIN-TRANSFER TORQUE MEMORY DEVICE

Initialization Process for Magnetic Random Access Memory (MRAM) Pro...