JIAQI YANG

Follow

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Structure for improving dielectric reliability of CMOS device
- Patent number 10,672,669
- Issue date Jun 2, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jiaqi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple work functions and manufacturi...
- Patent number 10,566,243
- Issue date Feb 18, 2020
- SEMICONDUCTOR MANUFACTURING INTERNATIONATIONAL (SHANGHAI) CORPORATION
- Jiaqi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for improving dielectric reliability of CMOS d...
- Patent number 10,418,287
- Issue date Sep 17, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jiaqi Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE FOR IMPROVING DIELECTRIC RELIABILITY OF CMOS DEVICE
- Publication number 20190363025
- Publication date Nov 28, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- JIAQI YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE WORK FUNCTIONS AND MANUFACTURI...
- Publication number 20180269106
- Publication date Sep 20, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- JIAQI YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR IMPROVING DIELECTRIC RELIABILITY OF CMOS D...
- Publication number 20180269113
- Publication date Sep 20, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- JIAQI YANG
- H01 - BASIC ELECTRIC ELEMENTS