Jiaqian XUE

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Two-step L-shaped selective epitaxial growth
- Patent number 12,052,866
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,751,385
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian Xue
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,563,021
- Issue date Jan 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Bo Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH SPLIT CHANNEL GATES
- Publication number 20220123004
- Publication date Apr 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-STEP L-SHAPED SELECTIVE EPITAXIAL GROWTH
- Publication number 20220028883
- Publication date Jan 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wanbo GENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210296336
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210265364
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Bo HUANG
- H01 - BASIC ELECTRIC ELEMENTS