Jiaxin YAO

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Beijing, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming gate-all-around nanowire device
- Patent number 11,594,608
- Issue date Feb 28, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of stacked gate-all-around nano-sheet CMOS device and met...
- Patent number 11,411,091
- Issue date Aug 9, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3DS FET AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240379794
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF STACKED GATE-ALL-AROUND NANO-SHEET CMOS DEVICE AND MET...
- Publication number 20220115513
- Publication date Apr 14, 2022
- INSTITUTE OF MICROELECTONICS, CHINESE ACADEMY OF SCIENCES
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Forming Gate-All-Around Nanowire Device
- Publication number 20200335596
- Publication date Oct 22, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS