Jie Bai

Person

Bedford, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 9,934,967
- Issue date Apr 3, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jennifer M. Hydrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 9,818,819
- Issue date Nov 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 9,318,325
- Issue date Apr 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 8,847,279
- Issue date Sep 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,384,196
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Defect reduction using aspect ratio trapping
- Patent number 8,173,551
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,034,697
- Issue date Oct 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20160218173
- Publication date Jul 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20140342536
- Publication date Nov 20, 2014
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20130134480
- Publication date May 30, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer M. Hydrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20120199876
- Publication date Aug 9, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jie Bai
- C30 - CRYSTAL GROWTH
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20120068226
- Publication date Mar 22, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer Hydrick
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20100216277
- Publication date Aug 26, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Defect Reduction Using Aspect Ratio Trapping
- Publication number 20080099785
- Publication date May 1, 2008
- AmberWave Systems Coporation
- Jie Bai
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Formation of devices by epitaxial layer overgrowth

Defect reduction using aspect ratio trapping

Defect reduction using aspect ratio trapping

Defect reduction using aspect ratio trapping

Formation of devices by epitaxial layer overgrowth

Defect reduction using aspect ratio trapping

Formation of devices by epitaxial layer overgrowth

Patents Applicationslast 30 patents

Defect Reduction Using Aspect Ratio Trapping

Defect Reduction Using Aspect Ratio Trapping

Formation of Devices by Epitaxial Layer Overgrowth

Defect Reduction Using Aspect Ratio Trapping

Formation of Devices by Epitaxial Layer Overgrowth

Formation of Devices by Epitaxial Layer Overgrowth

Defect Reduction Using Aspect Ratio Trapping