Jie Deng

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 10,374,042
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,679,969
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 9,639,652
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,595,598
- Issue date Mar 14, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxially formed buried channel re...
- Patent number 9,590,106
- Issue date Mar 7, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dynamically switching analyses and for dynamically switc...
- Patent number 8,959,008
- Issue date Feb 17, 2015
- International Business Machines Corporation
- Michael Claus Olsen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Compact model for device/circuit/chip leakage current (IDDQ) calcul...
- Patent number 8,626,480
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Asymmetric channel MOSFET
- Patent number 8,298,897
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric channel MOSFET
- Patent number 8,237,197
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170069718
- Publication date Mar 9, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062589
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062570
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...
- Publication number 20170062602
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Jie Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...
- Publication number 20140123097
- Publication date May 1, 2014
- International Business Machines Corporation
- Paul Chang
- G01 - MEASURING TESTING
Information Patent Application
Method for Dynamically Switching Analyses and For Dynamically Switc...
- Publication number 20120203532
- Publication date Aug 9, 2012
- International Business Machines Corporation
- Michael Claus Olsen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC CHANNEL MOSFET
- Publication number 20120190160
- Publication date Jul 26, 2012
- GLOBALFOUNDRIES INC.
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC CHANNEL MOSFET
- Publication number 20120007145
- Publication date Jan 12, 2012
- GLOBALFOUNDRIES INC.
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...
- Publication number 20110082680
- Publication date Apr 7, 2011
- International Business Machines Corporation
- Paul Chang
- G06 - COMPUTING CALCULATING COUNTING

Person

Patents Grantslast 30 patents

Semiconductor device including epitaxially formed buried channel re...

Semiconductor device including epitaxially formed buried channel re...

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Semiconductor device including epitaxially formed buried channel re...

Semiconductor device including epitaxially formed buried channel re...

Method for dynamically switching analyses and for dynamically switc...

Compact model for device/circuit/chip leakage current (IDDQ) calcul...

Asymmetric channel MOSFET

Asymmetric channel MOSFET

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL RE...

COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...

Method for Dynamically Switching Analyses and For Dynamically Switc...

ASYMMETRIC CHANNEL MOSFET

ASYMMETRIC CHANNEL MOSFET

COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCUL...