Jie Yang

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Unipolar spacer formation for finFETs
- Patent number 10,608,100
- Issue date Mar 31, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial cap for forming semiconductor contact
- Patent number 10,573,567
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of fin field effect transistor complementary metal-oxid...
- Patent number 10,573,566
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel FinFETs having uniform fin heights
- Patent number 10,546,788
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel FinFETs having uniform fin heights
- Patent number 10,438,855
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial cap for forming semiconductor contact
- Patent number 10,431,503
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming strained channel with germanium condensation
- Patent number 10,333,000
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased source/drain area
- Patent number 10,242,983
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unipolar spacer formation for finFETs
- Patent number 10,170,586
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming strained channel with germanium condensation
- Patent number 10,164,103
- Issue date Dec 25, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of fin field effect transistor complementary metal-oxid...
- Patent number 10,147,651
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unipolar spacer formation for finFETS
- Patent number 10,103,243
- Issue date Oct 16, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased source/drain area
- Patent number 9,837,407
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unipolar spacer formation for finFETs
- Patent number 9,812,553
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial cap for forming semiconductor contact
- Patent number 9,805,989
- Issue date Oct 31, 2017
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED LITHO-ETCH DOUBLE PATTERNING
- Publication number 20200185269
- Publication date Jun 11, 2020
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL CAP FOR FORMING SEMICONDUCTOR CONTACT
- Publication number 20190341318
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIN FIELD EFFECT TRANSISTOR COMPLEMENTARY METAL-OXID...
- Publication number 20190035695
- Publication date Jan 31, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRAINED CHANNEL WITH GERMANIUM CONDENSATION
- Publication number 20180358460
- Publication date Dec 13, 2018
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIPOLAR SPACER FORMATION FOR FINFETS
- Publication number 20180342597
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIN FIELD EFFECT TRANSISTOR COMPLEMENTARY METAL-OXID...
- Publication number 20180331104
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS
- Publication number 20180240714
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS
- Publication number 20180240713
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRAINED CHANNEL WITH GERMANIUM CONDENSATION
- Publication number 20180108769
- Publication date Apr 19, 2018
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL CAP FOR FORMING SEMICONDUCTOR CONTACT
- Publication number 20180082909
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED SOURCE/DRAIN AREA
- Publication number 20180069001
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIPOLAR SPACER FORMATION FOR FINFETS
- Publication number 20180040712
- Publication date Feb 8, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIPOLAR SPACER FORMATION FOR FINFETS
- Publication number 20180026114
- Publication date Jan 25, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Unipolar spacer formation for finFETs

Sacrificial cap for forming semiconductor contact

Fabrication of fin field effect transistor complementary metal-oxid...

Dual channel FinFETs having uniform fin heights

Dual channel FinFETs having uniform fin heights

Sacrificial cap for forming semiconductor contact

Forming strained channel with germanium condensation

Semiconductor device with increased source/drain area

Unipolar spacer formation for finFETs

Forming strained channel with germanium condensation

Fabrication of fin field effect transistor complementary metal-oxid...

Unipolar spacer formation for finFETS

Semiconductor device with increased source/drain area

Unipolar spacer formation for finFETs

Sacrificial cap for forming semiconductor contact

Patents Applicationslast 30 patents

SELF-ALIGNED LITHO-ETCH DOUBLE PATTERNING

SACRIFICIAL CAP FOR FORMING SEMICONDUCTOR CONTACT

FABRICATION OF FIN FIELD EFFECT TRANSISTOR COMPLEMENTARY METAL-OXID...

FORMING STRAINED CHANNEL WITH GERMANIUM CONDENSATION

UNIPOLAR SPACER FORMATION FOR FINFETS

FABRICATION OF FIN FIELD EFFECT TRANSISTOR COMPLEMENTARY METAL-OXID...

DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

FORMING STRAINED CHANNEL WITH GERMANIUM CONDENSATION

SACRIFICIAL CAP FOR FORMING SEMICONDUCTOR CONTACT

SEMICONDUCTOR DEVICE WITH INCREASED SOURCE/DRAIN AREA

UNIPOLAR SPACER FORMATION FOR FINFETS

UNIPOLAR SPACER FORMATION FOR FINFETS