Jie Yu

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Gas-phase additives for an enhancement of lateral etch component du...
- Patent number 6,355,581
- Issue date Mar 12, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Vladislav Vassiliev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming spacers of multiple widths
- Patent number 6,316,304
- Issue date Nov 13, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an L-shaped spacer with a disposable organic top...
- Patent number 6,294,480
- Issue date Sep 25, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a sidewall spacer and a salicide blocking shape,...
- Patent number 6,277,683
- Issue date Aug 21, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selective nitride spacer etch with high ratio of spacer width...
- Patent number 6,277,700
- Issue date Aug 21, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Jie Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form an L-shaped silicon nitride sidewall spacer
- Patent number 6,251,764
- Issue date Jun 26, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned floating gate for memory application using shallow tre...
- Patent number 6,228,713
- Issue date May 8, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high-density high-capacity capacitor
- Patent number 6,211,008
- Issue date Apr 3, 2001
- Chartered Semiconductor Manufacturing, Ltd.
- Jie Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lightly doped source and drain structure using...
- Patent number 6,156,598
- Issue date Dec 5, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Mei Sheng Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for organic barc and photoresist trimming process
- Publication number 20030092281
- Publication date May 15, 2003
- CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
- Pradeep Yelehanka Ramachandramurthy
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Person

Patents Grantslast 30 patents

Gas-phase additives for an enhancement of lateral etch component du...

Method of forming spacers of multiple widths

Method for forming an L-shaped spacer with a disposable organic top...

Method of forming a sidewall spacer and a salicide blocking shape,...

High selective nitride spacer etch with high ratio of spacer width...

Method to form an L-shaped silicon nitride sidewall spacer

Self-aligned floating gate for memory application using shallow tre...

Method for forming high-density high-capacity capacitor

Method for forming a lightly doped source and drain structure using...

Patents Applicationslast 30 patents

Method for organic barc and photoresist trimming process