Jie ZHANG

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Starkville, MS, US

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth on low degree off-axis silicon carbide substrates...
- Patent number 8,591,651
- Issue date Nov 26, 2013
- Power Integrations, Inc.
- Jie Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth on low degree off-axis SiC substrates and semicond...
- Patent number 8,221,546
- Issue date Jul 17, 2012
- SS SC IP, LLC
- Jie Zhang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL GROWTH ON LOW DEGREE OFF-AXIS SILICON CARBIDE SUBSTRATES...
- Publication number 20120248463
- Publication date Oct 4, 2012
- SS SC IP, LLC
- Jie ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Growth on Low Degree Off-Axis SiC Substrates and Semicond...
- Publication number 20090242899
- Publication date Oct 1, 2009
- SEMISOUTH LABORATORIES, INC.
- Jie Zhang
- C30 - CRYSTAL GROWTH