Jiefeng Lin

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structure with non-gated well tap cell
- Patent number 11,908,896
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density capacitor implemented using FinFET
- Patent number 11,728,373
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with non-gated well tap cell
- Patent number 11,387,321
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reconfiguring layout and sizing for transistor components to simult...
- Patent number 11,210,447
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Jeff Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure
- Patent number 10,879,172
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Jeff Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density capacitor implemented using FinFET
- Patent number 10,790,352
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with non-gated well tap cell
- Patent number 10,665,673
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105851
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiefeng Jeff LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY CAPACITOR IMPLEMENTED USING FINFET
- Publication number 20230369387
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure With Non-Gated Well Tap Cell
- Publication number 20220352318
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Density Capacitor Implemented Using FinFET
- Publication number 20210013300
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure With Non-Gated Well Tap Cell
- Publication number 20200286993
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT AND SIZING FOR HIGH SPEED APPLICATIONS
- Publication number 20200097632
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiefeng Jeff Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20200058580
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiefeng Jeff LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY CAPACITOR IMPLEMENTED USING FINFET
- Publication number 20200006467
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure With Non-Gated Well Tap Cell
- Publication number 20200006484
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Jiefeng Lin
- H01 - BASIC ELECTRIC ELEMENTS

Jiefeng Lin

Person

Patents Grantslast 30 patents

Integrated circuit structure with non-gated well tap cell

High density capacitor implemented using FinFET

Integrated circuit structure with non-gated well tap cell

Reconfiguring layout and sizing for transistor components to simult...

Semiconductor structure

High density capacitor implemented using FinFET

Integrated circuit structure with non-gated well tap cell

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

HIGH DENSITY CAPACITOR IMPLEMENTED USING FINFET

Integrated Circuit Structure With Non-Gated Well Tap Cell

High Density Capacitor Implemented Using FinFET

Integrated Circuit Structure With Non-Gated Well Tap Cell

TRANSISTOR LAYOUT AND SIZING FOR HIGH SPEED APPLICATIONS

SEMICONDUCTOR STRUCTURE

HIGH DENSITY CAPACITOR IMPLEMENTED USING FINFET

Integrated Circuit Structure With Non-Gated Well Tap Cell