Jifa Hao

Person

White Haven, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduction of degradation due to hot carrier injection
- Patent number 9,537,001
- Issue date Jan 3, 2017
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate runner and field implant termination for trench dev...
- Patent number 8,872,278
- Issue date Oct 28, 2014
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve the reliability of the breakdown voltage in high...
- Patent number 8,357,562
- Issue date Jan 22, 2013
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RESURF device including increased breakdown voltage
- Patent number 8,269,277
- Issue date Sep 18, 2012
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to improve the reliability of the breakdown vo...
- Patent number 7,897,471
- Issue date Mar 1, 2011
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Patent number 7,436,021
- Issue date Oct 14, 2008
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with improved unclamped inductive switch...
- Patent number 7,332,750
- Issue date Feb 19, 2008
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Patent number 6,635,535
- Issue date Oct 21, 2003
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with low gate charge
- Patent number 6,573,569
- Issue date Jun 3, 2003
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling lifetime in a P-I-N diode and for forming d...
- Patent number 6,358,825
- Issue date Mar 19, 2002
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench MOS devices
- Patent number 6,077,744
- Issue date Jun 20, 2000
- Intersil Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCTION OF DEGRADATION DUE TO HOT CARRIER INJECTION
- Publication number 20160035883
- Publication date Feb 4, 2016
- Fairchild Semiconductor Corporation
- Jifa HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEV...
- Publication number 20130099311
- Publication date Apr 25, 2013
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS RELATED TO HOT CARRIER INJECTION RELIABILITY...
- Publication number 20130026569
- Publication date Jan 31, 2013
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESURF DEVICE INCLUDING INCREASED BREAKDOWN VOLTAGE
- Publication number 20120037988
- Publication date Feb 16, 2012
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE THE RELIABILITY OF THE BREAKDOWN VOLTAGE IN HIGH...
- Publication number 20110124197
- Publication date May 26, 2011
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS TO IMPROVE THE RELIABILITY OF THE BREAKDOWN VO...
- Publication number 20090315155
- Publication date Dec 24, 2009
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage LDMOS
- Publication number 20080210974
- Publication date Sep 4, 2008
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Publication number 20040104427
- Publication date Jun 3, 2004
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Publication number 20030096482
- Publication date May 22, 2003
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH LOW GATE CHARGE
- Publication number 20030085430
- Publication date May 8, 2003
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Reduction of degradation due to hot carrier injection

Integrated gate runner and field implant termination for trench dev...

Method to improve the reliability of the breakdown voltage in high...

RESURF device including increased breakdown voltage

Method and apparatus to improve the reliability of the breakdown vo...

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Power semiconductor device with improved unclamped inductive switch...

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Trench MOSFET with low gate charge

Process for controlling lifetime in a P-I-N diode and for forming d...

Semiconductor trench MOS devices

Patents Applicationslast 30 patents

REDUCTION OF DEGRADATION DUE TO HOT CARRIER INJECTION

INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEV...

METHODS AND APPARATUS RELATED TO HOT CARRIER INJECTION RELIABILITY...

RESURF DEVICE INCLUDING INCREASED BREAKDOWN VOLTAGE

METHOD TO IMPROVE THE RELIABILITY OF THE BREAKDOWN VOLTAGE IN HIGH...

METHOD AND APPARATUS TO IMPROVE THE RELIABILITY OF THE BREAKDOWN VO...

High voltage LDMOS

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Dense trench MOSFET with decreased etch sensitivity to deposition a...

TRENCH MOSFET WITH LOW GATE CHARGE