Jifeng Zhu

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lead wires in hybrid-bonded semiconductor devices
- Patent number 11,996,322
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,991,880
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,805,646
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 11,791,265
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings...
- Patent number 11,699,657
- Issue date Jul 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lead wires in hybrid-bonded semiconductor devices
- Patent number 11,670,543
- Issue date Jun 6, 2023
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,462,474
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding using dummy bonding contacts
- Patent number 11,462,503
- Issue date Oct 4, 2022
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lead wires in hybrid-bonded semiconductor devices
- Patent number 11,322,392
- Issue date May 3, 2022
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 11,276,642
- Issue date Mar 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,211,397
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding using dummy bonding contacts and dummy interconnects
- Patent number 11,205,619
- Issue date Dec 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 11,145,666
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line contact structure for three-dimensional memory devices an...
- Patent number 11,101,276
- Issue date Aug 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 11,056,387
- Issue date Jul 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding using dummy bonding contacts
- Patent number 11,049,834
- Issue date Jun 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a plurality of NAND strings
- Patent number 11,031,333
- Issue date Jun 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 10,867,678
- Issue date Dec 15, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,847,528
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and method for forming the same
- Patent number 10,840,125
- Issue date Nov 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jin Wen Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding using dummy bonding contacts
- Patent number 10,833,042
- Issue date Nov 10, 2020
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,804,287
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming three-dimensional integrated wiring structure an...
- Patent number 10,796,993
- Issue date Oct 6, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lead wires in hybrid-bonded semiconductor devices
- Patent number 10,763,158
- Issue date Sep 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding using dummy bonding contacts and dummy interconnects
- Patent number 10,748,851
- Issue date Aug 18, 2020
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 10,680,003
- Issue date Jun 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20250031366
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240292622
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20230422504
- Publication date Dec 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230005873
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES
- Publication number 20220270919
- Publication date Aug 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES
- Publication number 20220216099
- Publication date Jul 7, 2022
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...
- Publication number 20220208677
- Publication date Jun 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210398932
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210335745
- Publication date Oct 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Methods for Forming the Same
- Publication number 20210098491
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING USING DUMMY BONDING CONTACTS
- Publication number 20210035941
- Publication date Feb 4, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20200411547
- Publication date Dec 31, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES
- Publication number 20200402841
- Publication date Dec 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Meng Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...
- Publication number 20200381360
- Publication date Dec 3, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS
- Publication number 20200335450
- Publication date Oct 22, 2020
- Yangtze Memory Technologies Co., Ltd.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20200295019
- Publication date Sep 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...
- Publication number 20200266147
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...
- Publication number 20200258837
- Publication date Aug 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243553
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS
- Publication number 20200243455
- Publication date Jul 30, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING USING DUMMY BONDING CONTACTS
- Publication number 20200243473
- Publication date Jul 30, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Tao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...
- Publication number 20200152515
- Publication date May 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20200035542
- Publication date Jan 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jin Wen Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200027509
- Publication date Jan 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200027892
- Publication date Jan 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jifeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200006275
- Publication date Jan 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Staircase structure for memory device

Method for forming lead wires in hybrid-bonded semiconductor devices

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory devices and methods for forming the same

Method for forming three-dimensional integrated wiring structure an...

Three-dimensional memory devices having a plurality of NAND strings...

Method for forming lead wires in hybrid-bonded semiconductor devices

Three-dimensional memory devices having a plurality of NAND strings

Hybrid bonding using dummy bonding contacts

Method for forming lead wires in hybrid-bonded semiconductor devices

Method for forming three-dimensional integrated wiring structure an...

Three-dimensional memory devices and methods for forming the same

Hybrid bonding using dummy bonding contacts and dummy interconnects

Staircase structure for memory device

Memory cell structure of a three-dimensional memory device

Word line contact structure for three-dimensional memory devices an...

Method for forming three-dimensional integrated wiring structure an...

Hybrid bonding using dummy bonding contacts

Three-dimensional memory devices having a plurality of NAND strings

Three-dimensional memory devices

Memory cell structure of a three-dimensional memory device

Memory structure and method for forming the same

Hybrid bonding using dummy bonding contacts

Three-dimensional memory devices and fabricating methods thereof

Method for forming three-dimensional integrated wiring structure an...

Method for forming lead wires in hybrid-bonded semiconductor devices

Hybrid bonding using dummy bonding contacts and dummy interconnects

Staircase structure for memory device

Patents Applicationslast 30 patents

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES

METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES

METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

Three-Dimensional Memory Devices and Methods for Forming the Same

HYBRID BONDING USING DUMMY BONDING CONTACTS

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

METHOD FOR FORMING LEAD WIRES IN HYBRID-BONDED SEMICONDUCTOR DEVICES

METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...

HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS

STAIRCASE STRUCTURE FOR MEMORY DEVICE

METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...

WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING USING DUMMY BONDING CONTACTS AND DUMMY INTERCONNECTS

HYBRID BONDING USING DUMMY BONDING CONTACTS

METHOD FOR FORMING THREE-DIMENSIONAL INTEGRATED WIRING STRUCTURE AN...

MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME