Jimmie Wortman

Person

Chapel Hill, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-zone rapid thermal processing system utilizing wafer edge hea...
- Patent number 5,418,885
- Issue date May 23, 1995
- North Carolina State University
- John R. Hauser
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective deposition of doped silicon-germanium alloy on semiconduc...
- Patent number 5,336,903
- Issue date Aug 9, 1994
- North Carolina State University at Raleigh
- Mehmet C. Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conical rapid thermal processing apparatus
- Patent number 5,253,324
- Issue date Oct 12, 1993
- North Carolina State University
- Jimmie J. Wortman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition of germanium thin films on silicon dioxide employing int...
- Patent number 5,250,452
- Issue date Oct 5, 1993
- North Carolina State University
- Mehmet Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective germanium deposition on silicon and resulting structures
- Patent number 5,162,246
- Issue date Nov 10, 1992
- North Carolina State University
- Mehmet Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium silicon dioxide gate MOSFET
- Patent number 5,101,247
- Issue date Mar 31, 1992
- North Carolina State University
- Mehmet Ozturk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective germanium deposition on silicon and resulting structures
- Patent number 5,089,872
- Issue date Feb 18, 1992
- North Carolina State University
- Mehmet Ozturk
- H01 - BASIC ELECTRIC ELEMENTS

Jimmie Wortman

Person

Patents Grantslast 30 patents

Three-zone rapid thermal processing system utilizing wafer edge hea...

Selective deposition of doped silicon-germanium alloy on semiconduc...

Conical rapid thermal processing apparatus

Deposition of germanium thin films on silicon dioxide employing int...

Selective germanium deposition on silicon and resulting structures

Germanium silicon dioxide gate MOSFET

Selective germanium deposition on silicon and resulting structures