Jimmy Jianan Kan

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Engineered barrier layer interface for high speed spin-transfer tor...
- Patent number 10,833,254
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Message-based key generation using physical unclonable function (PUF)
- Patent number 10,547,460
- Issue date Jan 28, 2020
- QUALCOMM Incorporated
- Peiyuan Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Engineered barrier layer interface for high speed spin-transfer tor...
- Patent number 10,431,734
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
High-speed, low power spin-orbit torque (SOT) assisted spin-transfe...
- Patent number 10,381,060
- Issue date Aug 13, 2019
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-switched magneto-resistive random access memory (MRAM) empl...
- Patent number 10,224,368
- Issue date Mar 5, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with heterogeneous free laye...
- Patent number 10,134,808
- Issue date Nov 20, 2018
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 10,103,319
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing or avoiding metal deposition from etching magnetic tunnel...
- Patent number 10,096,649
- Issue date Oct 9, 2018
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physically unclonable function based on comparison of MTJ resistances
- Patent number 9,870,811
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Peiyuan Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method to generate a random number
- Patent number 9,824,735
- Issue date Nov 21, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G11 - INFORMATION STORAGE
Information Patent Grant
Comparator including a magnetic tunnel junction (MTJ) device and a...
- Patent number 9,813,049
- Issue date Nov 7, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio vertical interconnect access (via) interconnectio...
- Patent number 9,704,919
- Issue date Jul 11, 2017
- QUALCOMM Incorporated
- Yu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit-torque magnetoresistive random access memory with voltag...
- Patent number 9,646,670
- Issue date May 9, 2017
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 9,634,237
- Issue date Apr 25, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic etch stop layer for spin-transfer torque magnetoresistive...
- Patent number 9,620,706
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating smooth seed layers with uniform crystalline t...
- Patent number 9,595,666
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Antiferromagnetically coupled spin-torque oscillator with hard perp...
- Patent number 9,595,917
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...
- Patent number 9,590,010
- Issue date Mar 7, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random access memory with voltag...
- Patent number 9,589,619
- Issue date Mar 7, 2017
- QUALCOMM Incorporated
- Kangho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,570,509
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnesium oxide capping with a shorted path for perpendicular magne...
- Patent number 9,444,035
- Issue date Sep 13, 2016
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smooth seed layers with uniform crystalline texture for high perpen...
- Patent number 9,385,309
- Issue date Jul 5, 2016
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...
- Publication number 20190288187
- Publication date Sep 19, 2019
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-SWITCHED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) EMPL...
- Publication number 20190006415
- Publication date Jan 3, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EX...
- Publication number 20180266991
- Publication date Sep 20, 2018
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G01 - MEASURING TESTING
Information Patent Application
ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...
- Publication number 20180212142
- Publication date Jul 26, 2018
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MESSAGE-BASED KEY GENERATION USING PHYSICAL UNCLONABLE FUNCTION (PUF)
- Publication number 20180145838
- Publication date May 24, 2018
- QUALCOMM Incorporated
- Peiyuan Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFE...
- Publication number 20180061467
- Publication date Mar 1, 2018
- QUALCOMM Incorporated
- Jimmy Jianan KAN
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING OR AVOIDING METAL DEPOSITION FROM ETCHING MAGNETIC TUNNEL...
- Publication number 20180040668
- Publication date Feb 8, 2018
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES
- Publication number 20170365316
- Publication date Dec 21, 2017
- QUALCOMM Incorporated
- Peiyuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20170186942
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...
- Publication number 20170141729
- Publication date May 18, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH HETEROGENEOUS FREE LAYE...
- Publication number 20170125481
- Publication date May 4, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...
- Publication number 20170077387
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING
- Publication number 20170059669
- Publication date Mar 2, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- G01 - MEASURING TESTING
Information Patent Application
COMPARATOR INCLUDING A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND A...
- Publication number 20170047912
- Publication date Feb 16, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...
- Publication number 20170040945
- Publication date Feb 9, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20160284988
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...
- Publication number 20160267961
- Publication date Sep 15, 2016
- QUALCOMM Incorporated
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...
- Publication number 20160232959
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Kangho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20160225817
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20160181508
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...
- Publication number 20160155931
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...
- Publication number 20160072043
- Publication date Mar 10, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20150311427
- Publication date Oct 29, 2015
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS

Jimmy Jianan Kan

Person

Patents Grantslast 30 patents

Engineered barrier layer interface for high speed spin-transfer tor...

Message-based key generation using physical unclonable function (PUF)

Engineered barrier layer interface for high speed spin-transfer tor...

High-speed, low power spin-orbit torque (SOT) assisted spin-transfe...

Voltage-switched magneto-resistive random access memory (MRAM) empl...

Magnetic tunnel junction (MTJ) devices with heterogeneous free laye...

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Reducing or avoiding metal deposition from etching magnetic tunnel...

Physically unclonable function based on comparison of MTJ resistances

System and method to generate a random number

Comparator including a magnetic tunnel junction (MTJ) device and a...

Magnetic tunnel junction (MTJ) device array

High aspect ratio vertical interconnect access (via) interconnectio...

Spin-orbit-torque magnetoresistive random access memory with voltag...

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Magnetic etch stop layer for spin-transfer torque magnetoresistive...

Method of fabricating smooth seed layers with uniform crystalline t...

Antiferromagnetically coupled spin-torque oscillator with hard perp...

Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...

Spin-orbit-torque magnetoresistive random access memory with voltag...

Magnetic tunnel junction (MTJ) device array

Magnesium oxide capping with a shorted path for perpendicular magne...

Smooth seed layers with uniform crystalline texture for high perpen...

Patents Applicationslast 30 patents

ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...

VOLTAGE-SWITCHED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) EMPL...

MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EX...

ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TOR...

MESSAGE-BASED KEY GENERATION USING PHYSICAL UNCLONABLE FUNCTION (PUF)

HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFE...

REDUCING OR AVOIDING METAL DEPOSITION FROM ETCHING MAGNETIC TUNNEL...

PHYSICALLY UNCLONABLE FUNCTION BASED ON COMPARISON OF MTJ RESISTANCES

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH HETEROGENEOUS FREE LAYE...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...

MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING

COMPARATOR INCLUDING A MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND A...

ANTIFERROMAGNETICALLY COUPLED SPIN-TORQUE OSCILLATOR WITH HARD PERP...

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAG...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...

MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...