Jin-Aun Ng

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon and silicon germanium nanowire formation
- Patent number 11,854,905
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,749,679
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Juei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a semiconductor device
- Patent number 11,670,711
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,545,490
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire formation
- Patent number 11,404,325
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and formation method of semiconductor device with hybrid...
- Patent number 11,398,476
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with gate electro...
- Patent number 11,133,221
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-K metal gate device
- Patent number 11,094,545
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor structure
- Patent number 11,075,199
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Juei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin critical dimension loading optimization
- Patent number 11,004,747
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Ming Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a semiconductor device
- Patent number 10,854,742
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin critical dimension loading optimization
- Patent number 10,692,769
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Ming Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin critical dimension loading optimization
- Patent number 10,651,090
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Ming Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-k metal gate device
- Patent number 10,388,531
- Issue date Aug 20, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a semiconductor device
- Patent number 10,332,991
- Issue date Jun 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,204,905
- Issue date Feb 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Juei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a semiconductor device
- Patent number 9,991,375
- Issue date Jun 5, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for nFET with high k metal gate
- Patent number 9,947,528
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and methods for high-K and metal gate slacks
- Patent number 9,865,510
- Issue date Jan 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-k metal gate device
- Patent number 9,779,947
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and methods for high-k and metal gate stacks
- Patent number 9,576,855
- Issue date Feb 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-k metal gate device
- Patent number 9,252,224
- Issue date Feb 2, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and methods for high-k and metal gate stacks
- Patent number 9,219,125
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of hybrid high-k/metal-gate stack fabrication
- Patent number 9,093,559
- Issue date Jul 28, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and methods for high-K and metal gate stacks
- Patent number 9,000,533
- Issue date Apr 7, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure of a field effect transistor with an oxygen-contai...
- Patent number 8,871,625
- Issue date Oct 28, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-k metal gate device
- Patent number 8,822,283
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for high-K and metal gate stacks
- Patent number 8,698,252
- Issue date Apr 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a variety of replacement gate types including rep...
- Patent number 8,586,436
- Issue date Nov 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a sealing structure for high-k metal gate
- Patent number 8,450,161
- Issue date May 28, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS
- Publication number 20240395809
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon and Silicon Germanium Nanowire Formation
- Publication number 20220359309
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin-Aun Ng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS
- Publication number 20220336454
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20210335785
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Juei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE ELECTRO...
- Publication number 20210183707
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210183855
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Electrode of a Semiconductor Device
- Publication number 20210083087
- Publication date Mar 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Critical Dimension Loading Optimization
- Publication number 20200273754
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia Ming Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon and Silicon Germanium Nanowire Formation
- Publication number 20200273757
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin-Aun Ng
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH HYBRID...
- Publication number 20200135729
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Insulated Film for High-K Metal Gate Device
- Publication number 20190341263
- Publication date Nov 7, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Electrode of a Semiconductor Device
- Publication number 20190312138
- Publication date Oct 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20190189614
- Publication date Jun 20, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Juei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Critical Dimension Loading Optimization
- Publication number 20190067112
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia Ming Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Electrode of a Semiconductor Device
- Publication number 20180350966
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180308842
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Juei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Insulated Film For High-K Metal Gate Device
- Publication number 20180019133
- Publication date Jan 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE
- Publication number 20160196979
- Publication date Jul 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS
- Publication number 20160190018
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20150214115
- Publication date Jul 30, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR NFET WITH HIGH K METAL GATE
- Publication number 20150004779
- Publication date Jan 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE
- Publication number 20140367802
- Publication date Dec 18, 2014
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20140203373
- Publication date Jul 24, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE ELECTRODE OF A SEMICONDUCTOR DEVICE
- Publication number 20130320410
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jr-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20130285151
- Publication date Oct 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20130285150
- Publication date Oct 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR NFET WITH HIGH K METAL GATE
- Publication number 20130270647
- Publication date Oct 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE SEMICONDUCTOR DEVICE
- Publication number 20130249010
- Publication date Sep 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH AN OXYGEN-CONTAI...
- Publication number 20130244416
- Publication date Sep 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF HYBRID HIGH-K/METAL-GATE STACK FABRICATION
- Publication number 20130234254
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Silicon and silicon germanium nanowire formation

Integrated circuit structure

Metal gate electrode of a semiconductor device

Semiconductor structure and method for forming the same

Silicon and silicon germanium nanowire formation

Structure and formation method of semiconductor device with hybrid...

Method for forming semiconductor device structure with gate electro...

Self-aligned insulated film for high-K metal gate device

Method of forming semiconductor structure

Fin critical dimension loading optimization

Metal gate electrode of a semiconductor device

Fin critical dimension loading optimization

Fin critical dimension loading optimization

Self-aligned insulated film for high-k metal gate device

Metal gate electrode of a semiconductor device

Semiconductor structure and manufacturing method thereof

Metal gate electrode of a semiconductor device

Structure and method for nFET with high k metal gate

Device and methods for high-K and metal gate slacks

Self-aligned insulated film for high-k metal gate device

Device and methods for high-k and metal gate stacks

Self-aligned insulated film for high-k metal gate device

Device and methods for high-k and metal gate stacks

Method of hybrid high-k/metal-gate stack fabrication

Device and methods for high-K and metal gate stacks

Spacer structure of a field effect transistor with an oxygen-contai...

Self-aligned insulated film for high-k metal gate device

Device for high-K and metal gate stacks

Method of forming a variety of replacement gate types including rep...

Method of fabricating a sealing structure for high-k metal gate

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS

Silicon and Silicon Germanium Nanowire Formation

SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS

INTEGRATED CIRCUIT STRUCTURE

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE ELECTRO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Metal Gate Electrode of a Semiconductor Device

Fin Critical Dimension Loading Optimization

Silicon and Silicon Germanium Nanowire Formation

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH HYBRID...

Self-Aligned Insulated Film for High-K Metal Gate Device

Metal Gate Electrode of a Semiconductor Device

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

Fin Critical Dimension Loading Optimization

Metal Gate Electrode of a Semiconductor Device

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Self-Aligned Insulated Film For High-K Metal Gate Device

SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE

DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

STRUCTURE AND METHOD FOR NFET WITH HIGH K METAL GATE

SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

METAL GATE ELECTRODE OF A SEMICONDUCTOR DEVICE

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

STRUCTURE AND METHOD FOR NFET WITH HIGH K METAL GATE

METAL GATE SEMICONDUCTOR DEVICE

SPACER STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH AN OXYGEN-CONTAI...

METHOD OF HYBRID HIGH-K/METAL-GATE STACK FABRICATION