Jin Cai

Person

Courtlandt Manor, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 10,236,366
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System on chip fully-depleted silicon on insulator with RF and MM-w...
- Patent number 10,217,766
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral BiCMOS replacement metal gate
- Patent number 10,192,864
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System on chip fully-depleted silicon on insulator with rf and mm-w...
- Patent number 9,899,415
- Issue date Feb 20, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 9,887,278
- Issue date Feb 6, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated photonics with lateral bipolar and BiCMOS
- Patent number 9,742,147
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Jin Cai
- G02 - OPTICS
Information Patent Grant
Ultra-sensitive biosensor based on lateral bipolar junction transis...
- Patent number 9,726,631
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,691,886
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for adjusting threshold voltage of the array o...
- Patent number 9,666,267
- Issue date May 30, 2017
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,647,099
- Issue date May 9, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-sensitive biosensor based on lateral bipolar junction transis...
- Patent number 9,625,409
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar sensor with sensing signal amplification
- Patent number 9,564,429
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral bipolar transistors having surrounding extrinsic base p...
- Patent number 9,502,504
- Issue date Nov 22, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for adjusting threshold voltage of the array o...
- Patent number 9,484,464
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral BiCMOS replacement metal gate
- Patent number 9,478,534
- Issue date Oct 25, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated photonics with lateral bipolar and BiCMOS
- Patent number 9,450,381
- Issue date Sep 20, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,437,718
- Issue date Sep 6, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI CMOS structure having programmable floating backplate
- Patent number 9,379,028
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge sensors using inverted lateral bipolar junction transistors
- Patent number 9,377,543
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Grant
High speed bipolar junction transistor for high voltage applications
- Patent number 9,331,097
- Issue date May 3, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,318,585
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor having multi-sided base contact
- Patent number 9,293,454
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated finFET-BJT replacement metal gate
- Patent number 9,263,583
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetrical bipolar junction transistor array
- Patent number 9,263,336
- Issue date Feb 16, 2016
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having back gating, improved isolation and reduc...
- Patent number 9,202,864
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating MOSFET on silicon-on-insulator with internal...
- Patent number 9,178,061
- Issue date Nov 3, 2015
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI bipolar junction transistor with substrate bias voltages
- Patent number 9,171,924
- Issue date Oct 27, 2015
- GlobalFoundries U.S. 2 LLC
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge sensors using inverted lateral bipolar junction transistors
- Patent number 9,170,338
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Grant
Lateral bipolar transistors having partially-depleted intrinsic base
- Patent number 9,059,195
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical polysilicon-germanium heterojunction bipolar transistor
- Patent number 9,048,280
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20180108763
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM ON CHIP FULLY-DEPLETED SILICON ON INSULATOR WITH RF AND MM-W...
- Publication number 20180053785
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Jin CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM ON CHIP FULLY-DEPLETED SILICON ON INSULATOR WITH RF AND MM-W...
- Publication number 20180053784
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Jin CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SENSITIVE BIOSENSOR BASED ON LATERAL BIPOLAR JUNCTION TRANSIS...
- Publication number 20170227485
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20170092749
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BICMOS REPLACEMENT METAL GATE
- Publication number 20170005085
- Publication date Jan 5, 2017
- GLOBALFOUNDRIES INC.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...
- Publication number 20170004873
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL BIPOLAR SENSOR WITH SENSING SIGNAL AMPLIFICATION
- Publication number 20160379975
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Application
MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS
- Publication number 20160322779
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Jin Cai
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...
- Publication number 20160300935
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...
- Publication number 20160300934
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS
- Publication number 20160276807
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH BASE EXTENSION REGION
- Publication number 20160087068
- Publication date Mar 24, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRICAL BIPOLAR JUNCTION TRANSISTOR ARRAY
- Publication number 20150348844
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20150295119
- Publication date Oct 15, 2015
- International Business Machines Corporation
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Application
CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20150253438
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Jin Cai
- G01 - MEASURING TESTING
Information Patent Application
HIGH SPEED BIPOLAR JUNCTION TRANSISTOR FOR HIGH VOLTAGE APPLICATIONS
- Publication number 20150249085
- Publication date Sep 3, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL BIPOLAR TRANSISTORS HAVING SURROUNDING EXTRINSIC BASE P...
- Publication number 20150179778
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FINFET-BJT REPLACEMENT METAL GATE
- Publication number 20150102348
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BICMOS REPLACEMENT METAL GATE
- Publication number 20150097247
- Publication date Apr 9, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR HAVING MULTI-SIDED BASE CONTACT
- Publication number 20150041957
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI BIPOLAR JUNCTION TRANSISTOR WITH SUBSTRATE BIAS VOLTAGES
- Publication number 20150008977
- Publication date Jan 8, 2015
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...
- Publication number 20140362638
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL BIPOLAR TRANSISTORS HAVING PARTIALLY-DEPLETED INTRINSIC BASE
- Publication number 20140353726
- Publication date Dec 4, 2014
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS HAVING PARTIALLY-DEPLETED INTRINSIC BASE
- Publication number 20140357043
- Publication date Dec 4, 2014
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having Back Gating, Improved Isolation and Reduc...
- Publication number 20140183687
- Publication date Jul 3, 2014
- International Business Machines Corporation
- Jin CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FINFET WITH SUPER STEEP RETROGRADE WELL
- Publication number 20140159162
- Publication date Jun 12, 2014
- International Business Machines Corporation
- JIN CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FINFET WITH SUPER STEEP RETROGRADE WELL
- Publication number 20140159163
- Publication date Jun 12, 2014
- International Business Machines Corporation
- JIN CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY SOI LATERAL BIPOLAR FOR SRAM IN A CMOS PLATFORM
- Publication number 20140153328
- Publication date Jun 5, 2014
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY SOI LATERAL BIPOLAR FOR SRAM IN A CMOS PLATFORM
- Publication number 20140154845
- Publication date Jun 5, 2014
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

System on chip fully-depleted silicon on insulator with RF and MM-w...

Lateral BiCMOS replacement metal gate

System on chip fully-depleted silicon on insulator with rf and mm-w...

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

Monolithic integrated photonics with lateral bipolar and BiCMOS

Ultra-sensitive biosensor based on lateral bipolar junction transis...

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

Structure and method for adjusting threshold voltage of the array o...

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

Ultra-sensitive biosensor based on lateral bipolar junction transis...

Lateral bipolar sensor with sensing signal amplification

SOI lateral bipolar transistors having surrounding extrinsic base p...

Structure and method for adjusting threshold voltage of the array o...

Lateral BiCMOS replacement metal gate

Monolithic integrated photonics with lateral bipolar and BiCMOS

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

SOI CMOS structure having programmable floating backplate

Charge sensors using inverted lateral bipolar junction transistors

High speed bipolar junction transistor for high voltage applications

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

Bipolar junction transistor having multi-sided base contact

Integrated finFET-BJT replacement metal gate

Symmetrical bipolar junction transistor array

Integrated circuit having back gating, improved isolation and reduc...

Method for fabricating MOSFET on silicon-on-insulator with internal...

SOI bipolar junction transistor with substrate bias voltages

Charge sensors using inverted lateral bipolar junction transistors

Lateral bipolar transistors having partially-depleted intrinsic base

Vertical polysilicon-germanium heterojunction bipolar transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

SYSTEM ON CHIP FULLY-DEPLETED SILICON ON INSULATOR WITH RF AND MM-W...

SYSTEM ON CHIP FULLY-DEPLETED SILICON ON INSULATOR WITH RF AND MM-W...

ULTRA-SENSITIVE BIOSENSOR BASED ON LATERAL BIPOLAR JUNCTION TRANSIS...

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

LATERAL BICMOS REPLACEMENT METAL GATE

STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...

LATERAL BIPOLAR SENSOR WITH SENSING SIGNAL AMPLIFICATION

MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS

SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...

SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...

MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS

LATERAL BIPOLAR TRANSISTOR WITH BASE EXTENSION REGION

SYMMETRICAL BIPOLAR JUNCTION TRANSISTOR ARRAY

CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS

CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS

HIGH SPEED BIPOLAR JUNCTION TRANSISTOR FOR HIGH VOLTAGE APPLICATIONS

SOI LATERAL BIPOLAR TRANSISTORS HAVING SURROUNDING EXTRINSIC BASE P...

INTEGRATED FINFET-BJT REPLACEMENT METAL GATE

LATERAL BICMOS REPLACEMENT METAL GATE

BIPOLAR JUNCTION TRANSISTOR HAVING MULTI-SIDED BASE CONTACT

SOI BIPOLAR JUNCTION TRANSISTOR WITH SUBSTRATE BIAS VOLTAGES

STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...

LATERAL BIPOLAR TRANSISTORS HAVING PARTIALLY-DEPLETED INTRINSIC BASE

LATERAL BIPOLAR TRANSISTORS HAVING PARTIALLY-DEPLETED INTRINSIC BASE

Integrated Circuit Having Back Gating, Improved Isolation and Reduc...

BULK FINFET WITH SUPER STEEP RETROGRADE WELL

BULK FINFET WITH SUPER STEEP RETROGRADE WELL

COMPLEMENTARY SOI LATERAL BIPOLAR FOR SRAM IN A CMOS PLATFORM

COMPLEMENTARY SOI LATERAL BIPOLAR FOR SRAM IN A CMOS PLATFORM