Jin Ping Liu

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-bridging contact via structures in proximity
- Patent number 10,217,696
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures and fabrication methods thereof
- Patent number 10,204,991
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-bridging contact via structures in proximity
- Patent number 9,941,191
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,698,269
- Issue date Jul 4, 2017
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices comprising high-K dielectric layer and methods of forming same
- Patent number 9,673,039
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Shishir Ray
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transistor structures and fabrication methods thereof
- Patent number 9,647,073
- Issue date May 9, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using self-aligned quad...
- Patent number 9,620,380
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES, INC.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing liner corrosion during metallization of semiconductor devices
- Patent number 9,595,493
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Zhiguo Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional organic or glass interposer
- Patent number 9,490,197
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Mukta G. Farooq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating integrated circuits
- Patent number 9,472,465
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES, INC.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner and cap layer for placeholder source/drain contact structure...
- Patent number 9,466,723
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration method for fabrication of metal gate based multiple thr...
- Patent number 9,455,201
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming air gap structure using carbon-containing spacer
- Patent number 9,443,956
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for fabricating integrated circuits...
- Patent number 9,419,126
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES, INC.
- Xiaodong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming single diffusion breaks between finFET devices a...
- Patent number 9,406,676
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing gate height variation due to overlapping masks
- Patent number 9,401,416
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-shaped fin isolation region and methods of fabrication
- Patent number 9,373,535
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Hongliang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect-free relaxed covering layer on semiconductor substrate with...
- Patent number 9,368,342
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having multiple threshold voltages
- Patent number 9,362,180
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating fin structures with doped middle portions
- Patent number 9,343,371
- Issue date May 17, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal nitridation of one or more fin-type transistor layers
- Patent number 9,312,145
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- Wei Hua Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage contrast inspection of deep trench isolation
- Patent number 9,293,382
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Norbert Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Facilitating fabricating gate-all-around nanowire field-effect tran...
- Patent number 9,263,520
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-bridging contact via structures in proximity
- Patent number 9,245,788
- Issue date Jan 26, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of forming fins and gates with ult...
- Patent number 9,236,481
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform gate height for mixed-type non-planar semiconductor devices
- Patent number 9,230,822
- Issue date Jan 5, 2016
- GLOBALFOUNDRIES Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with relaxed silicon / germanium fins
- Patent number 9,196,710
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES, INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench MIM capacitor and moat isolation with epitaxial semicon...
- Patent number 9,171,848
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES, INC.
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming finFETs with self aligned fin formation
- Patent number 9,147,696
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating defect-free semiconductor structures
- Patent number 9,142,422
- Issue date Sep 22, 2015
- GLOBALFOUNDRIES Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY
- Publication number 20180068929
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF
- Publication number 20170213890
- Publication date Jul 27, 2017
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LINER CORROSION DURING METALLIZATION OF SEMICONDUCTOR DEVICES
- Publication number 20170047282
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Zhiguo SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE
- Publication number 20160315084
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES COMPRISING HIGH-K DIELECTRIC LAYER AND METHODS OF FORMING SAME
- Publication number 20160284540
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Shishir RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING FIN STRUCTURES WITH DOPED MIDDLE PORTIONS
- Publication number 20160225771
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20160190324
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES A...
- Publication number 20160190130
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AIR GAP STRUCTURE USING CARBON-CONTAINING SPACER
- Publication number 20160163816
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING GATE HEIGHT VARIATION DUE TO OVERLAPPING MASKS
- Publication number 20160163830
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES, Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL ORGANIC OR GLASS INTERPOSER
- Publication number 20160141237
- Publication date May 19, 2016
- International Business Machines Corporation
- Mukta G. FAROOQ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF
- Publication number 20160126316
- Publication date May 5, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
T-SHAPED FIN ISOLATION REGION AND METHODS OF FABRICATION
- Publication number 20160111320
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Hongliang SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...
- Publication number 20160099344
- Publication date Apr 7, 2016
- Jin Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY
- Publication number 20160035650
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM GATE HEIGHT FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES
- Publication number 20150364336
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Hong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING BULK FINFETS WITH LATERAL SEG FOR SO...
- Publication number 20150357332
- Publication date Dec 10, 2015
- GLOBALFOUNDRIES INC.
- Jin Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES
- Publication number 20150357292
- Publication date Dec 10, 2015
- GLOBALFOUNDRIES INC.
- Hung-Wei LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150333067
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUITS
- Publication number 20150325681
- Publication date Nov 12, 2015
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT-FREE RELAXED COVERING LAYER ON SEMICONDUCTOR SUBSTRATE WITH...
- Publication number 20150295047
- Publication date Oct 15, 2015
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH STRESSED SEMICONDUCTOR SUBSTRATES AND PROC...
- Publication number 20150287824
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES, Inc.
- Shishir Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS
- Publication number 20150255277
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Wei Hua TONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES
- Publication number 20150243563
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Bongki LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...
- Publication number 20150243652
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Manoj JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RELAXED SILICON / GERMANIUM FINS
- Publication number 20150228755
- Publication date Aug 13, 2015
- GLOBALFOUNDRIES, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20150214330
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FIN STRUCTURES AND METHODS OF FABRICATION
- Publication number 20150194307
- Publication date Jul 9, 2015
- GLOBALFOUNDRIES INC.
- Churamani GAIRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...
- Publication number 20150145102
- Publication date May 28, 2015
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES
- Publication number 20150123250
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Hung-Wei LIU
- H01 - BASIC ELECTRIC ELEMENTS

Jin Ping Liu

Person

Patents Grantslast 30 patents

Non-bridging contact via structures in proximity

Transistor structures and fabrication methods thereof

Non-bridging contact via structures in proximity

Conformal nitridation of one or more fin-type transistor layers

Devices comprising high-K dielectric layer and methods of forming same

Transistor structures and fabrication methods thereof

Methods for fabricating integrated circuits using self-aligned quad...

Reducing liner corrosion during metallization of semiconductor devices

Three dimensional organic or glass interposer

Methods of fabricating integrated circuits

Liner and cap layer for placeholder source/drain contact structure...

Integration method for fabrication of metal gate based multiple thr...

Method for forming air gap structure using carbon-containing spacer

Integrated circuits and methods for fabricating integrated circuits...

Method for forming single diffusion breaks between finFET devices a...

Method for reducing gate height variation due to overlapping masks

T-shaped fin isolation region and methods of fabrication

Defect-free relaxed covering layer on semiconductor substrate with...

Integrated circuit having multiple threshold voltages

Fabricating fin structures with doped middle portions

Conformal nitridation of one or more fin-type transistor layers

Voltage contrast inspection of deep trench isolation

Facilitating fabricating gate-all-around nanowire field-effect tran...

Non-bridging contact via structures in proximity

Semiconductor device and methods of forming fins and gates with ult...

Uniform gate height for mixed-type non-planar semiconductor devices

Integrated circuits with relaxed silicon / germanium fins

Deep trench MIM capacitor and moat isolation with epitaxial semicon...

Devices and methods of forming finFETs with self aligned fin formation

Methods of fabricating defect-free semiconductor structures

Patents Applicationslast 30 patents

NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY

TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF

REDUCING LINER CORROSION DURING METALLIZATION OF SEMICONDUCTOR DEVICES

DIFFERENT HEIGHT OF FINS IN SEMICONDUCTOR STRUCTURE

DEVICES COMPRISING HIGH-K DIELECTRIC LAYER AND METHODS OF FORMING SAME

FABRICATING FIN STRUCTURES WITH DOPED MIDDLE PORTIONS

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

METHOD FOR FORMING SINGLE DIFFUSION BREAKS BETWEEN FINFET DEVICES A...

METHOD FOR FORMING AIR GAP STRUCTURE USING CARBON-CONTAINING SPACER

METHOD FOR REDUCING GATE HEIGHT VARIATION DUE TO OVERLAPPING MASKS

THREE DIMENSIONAL ORGANIC OR GLASS INTERPOSER

TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF

T-SHAPED FIN ISOLATION REGION AND METHODS OF FABRICATION

FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...

NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY

UNIFORM GATE HEIGHT FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES

DEVICES AND METHODS OF FORMING BULK FINFETS WITH LATERAL SEG FOR SO...

METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION

METHODS OF FABRICATING INTEGRATED CIRCUITS

DEFECT-FREE RELAXED COVERING LAYER ON SEMICONDUCTOR SUBSTRATE WITH...

INTEGRATED CIRCUITS WITH STRESSED SEMICONDUCTOR SUBSTRATES AND PROC...

CONFORMAL NITRIDATION OF ONE OR MORE FIN-TYPE TRANSISTOR LAYERS

INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES

INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...

INTEGRATED CIRCUITS WITH RELAXED SILICON / GERMANIUM FINS

REPLACEMENT LOW-K SPACER

STRAINED FIN STRUCTURES AND METHODS OF FABRICATION

Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...

METHODS OF FABRICATING DEFECT-FREE SEMICONDUCTOR STRUCTURES