Jin Wen DONG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,380,701
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for improving channel hole uniformity of a three-dimensional...
- Patent number 11,329,061
- Issue date May 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,271,004
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,211,393
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 10,910,390
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang Pu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,892,274
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 10,867,678
- Issue date Dec 15, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,847,528
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and method for forming the same
- Patent number 10,840,125
- Issue date Nov 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jin Wen Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual damascene interconnect structure
- Patent number 10,692,756
- Issue date Jun 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jian Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,644,015
- Issue date May 5, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual-deck channel hole structure of three-dimens...
- Patent number 10,515,975
- Issue date Dec 24, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and forming method thereof
- Patent number 10,497,708
- Issue date Dec 3, 2019
- Yangtze Memory Technologies Co., Ltd.
- He Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20210118905
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210118896
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210104532
- Publication date Apr 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20210098481
- Publication date Apr 1, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243553
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DUAL DAMASCENE INTERCONNECT STRUCTURE
- Publication number 20200211895
- Publication date Jul 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jian Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20200035542
- Publication date Jan 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jin Wen Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200027509
- Publication date Jan 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...
- Publication number 20190378849
- Publication date Dec 12, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Forming Method Thereof
- Publication number 20190326308
- Publication date Oct 24, 2019
- Yangtze Memory Technologies Co., Ltd.
- Yue Qiang PU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20190139982
- Publication date May 9, 2019
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190096901
- Publication date Mar 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE CHANNEL HOLE UNIFORMITY OF A THREE-DIMENSIONAL ME...
- Publication number 20190074290
- Publication date Mar 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS

Jin Wen DONG

Person

Patents Grantslast 30 patents

Memory cell structure of a three-dimensional memory device

Memory device and forming method thereof

Method for improving channel hole uniformity of a three-dimensional...

Memory device and forming method thereof

Memory device and forming method thereof

Memory cell structure of a three-dimensional memory device

Memory device and forming method thereof

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory devices

Memory cell structure of a three-dimensional memory device

Memory structure and method for forming the same

Method for forming dual damascene interconnect structure

Memory cell structure of a three-dimensional memory device

Method for forming dual-deck channel hole structure of three-dimens...

Memory structure and forming method thereof

Patents Applicationslast 30 patents

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

Three-Dimensional Memory Devices and Fabricating Methods Thereof

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY DEVICE AND FORMING METHOD THEREOF

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

METHOD FOR FORMING DUAL DAMASCENE INTERCONNECT STRUCTURE

MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES

METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENS...

Memory Device and Forming Method Thereof

Three-Dimensional Memory Devices and Fabricating Methods Thereof

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

METHOD TO IMPROVE CHANNEL HOLE UNIFORMITY OF A THREE-DIMENSIONAL ME...