Jing Wan

Person

Malta, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Preserving the seed layer on STI edge and improving the epitaxial g...
- Patent number 10,020,383
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact formation
- Patent number 9,640,625
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of formation
- Patent number 9,608,086
- Issue date Mar 28, 2017
- Global Foundries Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming nanowire devices with doped extension regions an...
- Patent number 9,490,340
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming nanowire devices with spacers and the resulting...
- Patent number 9,431,512
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Shao-Ming Koh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Opposite polarity borderless replacement metal contact scheme
- Patent number 9,390,979
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with nanowires and methods of manufacturing the...
- Patent number 9,306,019
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES, INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Facilitating fabricating gate-all-around nanowire field-effect tran...
- Patent number 9,263,520
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Jin Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming finFETs with self aligned fin formation
- Patent number 9,147,696
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement low-K spacer
- Patent number 9,129,987
- Issue date Sep 8, 2015
- Global Foundries, Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PRESERVING THE SEED LAYER ON STI EDGE AND IMPROVING THE EPITAXIAL G...
- Publication number 20180286967
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE AND METHOD OF FORMATION
- Publication number 20170162688
- Publication date Jun 8, 2017
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRESERVING THE SEED LAYER ON STI EDGE AND IMPROVING THE EPITAXIAL G...
- Publication number 20160343607
- Publication date Nov 24, 2016
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...
- Publication number 20160099344
- Publication date Apr 7, 2016
- Jin Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPPOSITE POLARITY BORDERLESS REPLACEMENT METAL CONTACT SCHEME
- Publication number 20160071774
- Publication date Mar 10, 2016
- GLOBAL FOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH NANOWIRES AND METHODS OF MANUFACTURING THE...
- Publication number 20160049489
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES, Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CONFINED EPITAXY
- Publication number 20160005868
- Publication date Jan 7, 2016
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING NANOWIRE DEVICES WITH SPACERS AND THE RESULTING...
- Publication number 20150372111
- Publication date Dec 24, 2015
- GLOBALFOUNDRIES INC.
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING NANOWIRE DEVICES WITH DOPED EXTENSION REGIONS AN...
- Publication number 20150372115
- Publication date Dec 24, 2015
- GLOBALFOUNDRIES INC.
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE AND METHOD OF FORMATION
- Publication number 20150340461
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING NANOWIRE DEVICES WITH METAL-INSULATOR-SEMICONDUC...
- Publication number 20150333162
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150333067
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT FORMATION
- Publication number 20150311082
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT OPENINGS OVER FINS OF A SEMICONDUCTOR DEVICE
- Publication number 20150303295
- Publication date Oct 22, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...
- Publication number 20150270175
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE
- Publication number 20150255353
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20150214330
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...
- Publication number 20150214345
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...
- Publication number 20150104918
- Publication date Apr 16, 2015
- GLOBALFOUNDRIES INC.
- Jin Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150091094
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Preserving the seed layer on STI edge and improving the epitaxial g...

Self-aligned gate contact formation

Metal gate structure and method of formation

Methods of forming nanowire devices with doped extension regions an...

Methods of forming nanowire devices with spacers and the resulting...

Opposite polarity borderless replacement metal contact scheme

Integrated circuits with nanowires and methods of manufacturing the...

Facilitating fabricating gate-all-around nanowire field-effect tran...

Devices and methods of forming finFETs with self aligned fin formation

Replacement low-K spacer

Patents Applicationslast 30 patents

PRESERVING THE SEED LAYER ON STI EDGE AND IMPROVING THE EPITAXIAL G...

METAL GATE STRUCTURE AND METHOD OF FORMATION

PRESERVING THE SEED LAYER ON STI EDGE AND IMPROVING THE EPITAXIAL G...

FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...

OPPOSITE POLARITY BORDERLESS REPLACEMENT METAL CONTACT SCHEME

INTEGRATED CIRCUITS WITH NANOWIRES AND METHODS OF MANUFACTURING THE...

FINFET WITH CONFINED EPITAXY

METHODS OF FORMING NANOWIRE DEVICES WITH SPACERS AND THE RESULTING...

METHODS OF FORMING NANOWIRE DEVICES WITH DOPED EXTENSION REGIONS AN...

METAL GATE STRUCTURE AND METHOD OF FORMATION

METHODS OF FORMING NANOWIRE DEVICES WITH METAL-INSULATOR-SEMICONDUC...

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION

SELF-ALIGNED GATE CONTACT FORMATION

SELF-ALIGNED CONTACT OPENINGS OVER FINS OF A SEMICONDUCTOR DEVICE

PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...

FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE

REPLACEMENT LOW-K SPACER

DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...

FACILITATING FABRICATING GATE-ALL-AROUND NANOWIRE FIELD-EFFECT TRAN...

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION