Jing Zhang

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory system having thermally stable perpendicular magneto tunnel...
- Patent number 11,678,586
- Issue date Jun 13, 2023
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell including two-terminal selector device
- Patent number 11,127,787
- Issue date Sep 21, 2021
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number RE47975
- Issue date May 5, 2020
- Avalanche Technology, Inc.
- Jing Zhang
Information Patent Grant
Magnetic memory cell including two-terminal selector device
- Patent number 10,593,727
- Issue date Mar 17, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector device having asymmetric conductance for memory applications
- Patent number 10,559,624
- Issue date Feb 11, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,217,934
- Issue date Feb 26, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,177,308
- Issue date Jan 8, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for sensing memory element coupled to selector device
- Patent number 10,153,017
- Issue date Dec 11, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number 9,679,625
- Issue date Jun 13, 2017
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetic random access memory with perpendicul...
- Patent number 9,444,039
- Issue date Sep 13, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetic random access memory with perpendicul...
- Patent number 9,419,210
- Issue date Aug 16, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetic random access memory with perpendicul...
- Patent number 9,318,179
- Issue date Apr 19, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having stitched arrays of 4 F2 memory cells
- Patent number 9,209,390
- Issue date Dec 8, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number 9,196,332
- Issue date Nov 24, 2015
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ stack and bottom electrode patterning process with ion beam etc...
- Patent number 9,166,154
- Issue date Oct 20, 2015
- Avalance Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vialess memory structure and method of manufacturing same
- Patent number 9,082,695
- Issue date Jul 14, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shields for magnetic memory chip packages
- Patent number 9,070,692
- Issue date Jun 30, 2015
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for high-density MRAM using thin hard mask
- Patent number 9,070,869
- Issue date Jun 30, 2015
- Avalanche Technology, Inc.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having stitched arrays of 4 F2 memory cells
- Patent number 9,029,824
- Issue date May 12, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density resistive memory having a vertical dual channel transi...
- Patent number 9,029,822
- Issue date May 12, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-transfer torque magnetic random access memory with perpendicul...
- Patent number 9,019,758
- Issue date Apr 28, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM with sidewall protection and method of fabrication
- Patent number 9,013,045
- Issue date Apr 21, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with switchable switching assist layer
- Patent number 8,981,506
- Issue date Mar 17, 2015
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM etching processes
- Patent number 8,975,088
- Issue date Mar 10, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MTJ memory element
- Patent number 8,975,089
- Issue date Mar 10, 2015
- Avalanche Technology, Inc.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction memory element
- Patent number 8,962,349
- Issue date Feb 24, 2015
- Avalanche Technology, Inc.
- Benjamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having vertical selection transistors with shared cha...
- Patent number 8,890,108
- Issue date Nov 18, 2014
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redeposition control in MRAM fabrication process
- Patent number 8,883,520
- Issue date Nov 11, 2014
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed STT-MRAM with orthogonal pinned layer
- Patent number 8,860,158
- Issue date Oct 14, 2014
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for bit-error rate testing of resistance-based RAM cells usi...
- Patent number 8,806,284
- Issue date Aug 12, 2014
- Avalanche Technology Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MICROSIMULATION OF MULTI-CANCER EARLY DETECTION EFFECTS USING PARAL...
- Publication number 20230039614
- Publication date Feb 9, 2023
- GRAIL, LLC
- Nan Zhang
Information Patent Application
Magnetic Memory Cell Including Two-Terminal Selector Device
- Publication number 20200185455
- Publication date Jun 11, 2020
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...
- Publication number 20190148622
- Publication date May 16, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180366642
- Publication date Dec 20, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180358547
- Publication date Dec 13, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Cell Including Two-Terminal Selector Device
- Publication number 20180240845
- Publication date Aug 23, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selector Device Having Asymmetric Conductance for Memory Applications
- Publication number 20180240844
- Publication date Aug 23, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Sensing Memory Element Coupled to Selector Device
- Publication number 20180075891
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...
- Publication number 20160197269
- Publication date Jul 7, 2016
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...
- Publication number 20160055893
- Publication date Feb 25, 2016
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS
- Publication number 20150214278
- Publication date Jul 30, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...
- Publication number 20150188035
- Publication date Jul 2, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...
- Publication number 20150188036
- Publication date Jul 2, 2015
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR HIGH-DENSITY MRAM USING THIN HARD MASK
- Publication number 20150104882
- Publication date Apr 16, 2015
- AVALANCHE TECHNOLOGY INC.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH SWITABLE SWITCHING ASSIST LAYER
- Publication number 20150061050
- Publication date Mar 5, 2015
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ MEMORY CELL WITH PROTECTION SLEEVE AND METHOD FOR MAKING SAME
- Publication number 20150014800
- Publication date Jan 15, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- G11 - INFORMATION STORAGE
Information Patent Application
Redeposition Control in MRAM Fabrication Process
- Publication number 20150014801
- Publication date Jan 15, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS
- Publication number 20140339626
- Publication date Nov 20, 2014
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Methods to Enhance Field Gradient For Magnetic Rare C...
- Publication number 20140248679
- Publication date Sep 4, 2014
- Jing Zhang
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
METHODS AND APPARATUS FOR TARGET CELL MAGNETIC ENRICHMENT, ISOLATIO...
- Publication number 20140242603
- Publication date Aug 28, 2014
- Glenn Yaguang Deng
- B03 - SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES O...
Information Patent Application
MRAM with Sidewall Protection and Method of Fabrication
- Publication number 20140210103
- Publication date Jul 31, 2014
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDS FOR MAGNETIC MEMORY CHIP PACKAGES
- Publication number 20140197505
- Publication date Jul 17, 2014
- AVALANCHE TECHNOLOGY INC.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ STACK AND BOTTOM ELECTRODE PATTERNING PROCESS WITH ION BEAM ETC...
- Publication number 20140170776
- Publication date Jun 19, 2014
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY RESISTIVE MEMORY HAVING A VERTICAL DUAL CHANNEL TRANSI...
- Publication number 20140138609
- Publication date May 22, 2014
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ MRAM WITH STUD PATTERNING
- Publication number 20140042567
- Publication date Feb 13, 2014
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH SWITCHING ASSIST LAYER
- Publication number 20140027697
- Publication date Jan 30, 2014
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Redeposition Control in MRAM Fabrication Process
- Publication number 20130341801
- Publication date Dec 26, 2013
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM ETCHING PROCESSES
- Publication number 20130337582
- Publication date Dec 19, 2013
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Bit-Error Rate Testing of Resistance-based RAM Cells Usi...
- Publication number 20130294144
- Publication date Nov 7, 2013
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH FIELD COMPENSATING LAYER AND MUL...
- Publication number 20130286723
- Publication date Oct 31, 2013
- Yuchen Zhou
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory system having thermally stable perpendicular magneto tunnel...

Magnetic memory cell including two-terminal selector device

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Magnetic memory cell including two-terminal selector device

Selector device having asymmetric conductance for memory applications

Method for manufacturing magnetic memory cells

Method for manufacturing magnetic memory cells

Method for sensing memory element coupled to selector device

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Spin-transfer torque magnetic random access memory with perpendicul...

Spin-transfer torque magnetic random access memory with perpendicul...

Spin-transfer torque magnetic random access memory with perpendicul...

Memory device having stitched arrays of 4 F2 memory cells

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

MTJ stack and bottom electrode patterning process with ion beam etc...

Vialess memory structure and method of manufacturing same

Shields for magnetic memory chip packages

Fabrication method for high-density MRAM using thin hard mask

Memory device having stitched arrays of 4 F2 memory cells

High density resistive memory having a vertical dual channel transi...

Spin-transfer torque magnetic random access memory with perpendicul...

MRAM with sidewall protection and method of fabrication

Magnetic random access memory with switchable switching assist layer

MRAM etching processes

Method for forming MTJ memory element

Method of manufacturing magnetic tunnel junction memory element

Memory device having vertical selection transistors with shared cha...

Redeposition control in MRAM fabrication process

High speed STT-MRAM with orthogonal pinned layer

Method for bit-error rate testing of resistance-based RAM cells usi...

Patents Applicationslast 30 patents

MICROSIMULATION OF MULTI-CANCER EARLY DETECTION EFFECTS USING PARAL...

Magnetic Memory Cell Including Two-Terminal Selector Device

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...

Method for Manufacturing Magnetic Memory Cells

Method for Manufacturing Magnetic Memory Cells

Magnetic Memory Cell Including Two-Terminal Selector Device

Selector Device Having Asymmetric Conductance for Memory Applications

Method for Sensing Memory Element Coupled to Selector Device

SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...

MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS

SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...

SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICUL...

FABRICATION METHOD FOR HIGH-DENSITY MRAM USING THIN HARD MASK

MAGNETIC RANDOM ACCESS MEMORY WITH SWITABLE SWITCHING ASSIST LAYER

MTJ MEMORY CELL WITH PROTECTION SLEEVE AND METHOD FOR MAKING SAME

Redeposition Control in MRAM Fabrication Process

MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS

Apparatus and Methods to Enhance Field Gradient For Magnetic Rare C...

METHODS AND APPARATUS FOR TARGET CELL MAGNETIC ENRICHMENT, ISOLATIO...

MRAM with Sidewall Protection and Method of Fabrication

SHIELDS FOR MAGNETIC MEMORY CHIP PACKAGES

MTJ STACK AND BOTTOM ELECTRODE PATTERNING PROCESS WITH ION BEAM ETC...

HIGH DENSITY RESISTIVE MEMORY HAVING A VERTICAL DUAL CHANNEL TRANSI...

MTJ MRAM WITH STUD PATTERNING

MAGNETIC RANDOM ACCESS MEMORY WITH SWITCHING ASSIST LAYER

Redeposition Control in MRAM Fabrication Process

MRAM ETCHING PROCESSES

Method for Bit-Error Rate Testing of Resistance-based RAM Cells Usi...

MAGNETIC RANDOM ACCESS MEMORY WITH FIELD COMPENSATING LAYER AND MUL...