Jingjing Geng

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices with drain-select-gate cut structu...
- Patent number 12,082,414
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
Information Patent Grant
Vertical memory devices
- Patent number 12,048,153
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiangwei Zhang
Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having isolation structure for sou...
- Patent number 11,990,506
- Issue date May 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices having dummy channel structures an...
- Patent number 11,985,824
- Issue date May 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming stairs in three-dimensional memory...
- Patent number 11,950,418
- Issue date Apr 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xinxin Liu
Information Patent Grant
Method for forming three-dimensional memory device with sacrificial...
- Patent number 11,937,427
- Issue date Mar 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Three-dimensional memory device with reduced local stress
- Patent number 11,800,707
- Issue date Oct 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
Information Patent Grant
Three-dimensional memory devices having isolation structure for sou...
- Patent number 11,711,921
- Issue date Jul 25, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming stairs in three-dimensional memory...
- Patent number 11,552,097
- Issue date Jan 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xinxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memeory devices with drain-se...
- Patent number 11,502,098
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20240389326
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20230301106
- Publication date Sep 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...
- Publication number 20230095343
- Publication date Mar 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xinxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20230005959
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20220231043
- Publication date Jul 21, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiangwei ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20220181349
- Publication date Jun 9, 2022
- Yangtze Memory Technologies Co., Ltd.
- Bin YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH NOVEL DUMMY CHANNEL STRUC...
- Publication number 20220149062
- Publication date May 12, 2022
- Yangtze Memory Technologies Co., Ltd.
- QiangWei ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20220085181
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20220077181
- Publication date Mar 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING DUMMY CHANNEL STRUCTURES AN...
- Publication number 20220077180
- Publication date Mar 10, 2022
- Yangtza Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...
- Publication number 20220077283
- Publication date Mar 10, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jiajia Wu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20210335812
- Publication date Oct 28, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20210335806
- Publication date Oct 28, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305274
- Publication date Sep 30, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20210305277
- Publication date Sep 30, 2021
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...
- Publication number 20210249438
- Publication date Aug 12, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Xinxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...
- Publication number 20210134830
- Publication date May 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xinxin Liu
- H01 - BASIC ELECTRIC ELEMENTS

Jingjing Geng

Person

Patents Grantslast 30 patents

Three-dimensional memory devices with drain-select-gate cut structu...

Vertical memory devices

Method of forming top select gate trenches

Three-dimensional memory devices having isolation structure for sou...

Three-dimensional memory devices having dummy channel structures an...

Method and structure for forming stairs in three-dimensional memory...

Method for forming three-dimensional memory device with sacrificial...

Three-dimensional memory device with reduced local stress

Three-dimensional memory devices having isolation structure for sou...

Method and structure for forming stairs in three-dimensional memory...

Methods for forming three-dimensional memeory devices with drain-se...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

METHOD OF FORMING TOP SELECT GATE TRENCHES

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

VERTICAL MEMORY DEVICES

SEMICONDUCTOR DEVICE FABRICATION

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH NOVEL DUMMY CHANNEL STRUC...

METHOD OF FORMING TOP SELECT GATE TRENCHES

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

THREE-DIMENSIONAL MEMORY DEVICES HAVING DUMMY CHANNEL STRUCTURES AN...

THREE-DIMENSIONAL MEMORY DEVICES HAVING ISOLATION STRUCTURE FOR SOU...

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...

METHOD AND STRUCTURE FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY...