Jingyan Zhang

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of correlated electron material (CEM) devices
- Patent number 10,672,982
- Issue date Jun 2, 2020
- ARM Limited
- Ming He
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for epitaxial silicon growth
- Patent number 9,217,209
- Issue date Dec 22, 2015
- Micron Technology, Inc.
- Jingyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-volatile storage system using opposite polarity programming sig...
- Patent number 9,047,949
- Issue date Jun 2, 2015
- Sandisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell that employs a selectively fabricated carbon nano-tube...
- Patent number 8,878,235
- Issue date Nov 4, 2014
- Sandisk 3D LLC
- April D. Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile storage system using opposite polarity programming sig...
- Patent number 8,699,259
- Issue date Apr 15, 2014
- Sandisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming a reversible resistance-switching metal-insulato...
- Patent number 8,551,850
- Issue date Oct 8, 2013
- Sandisk 3D LLC
- Yubao Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a nonvolatile memory cell by reverse biasing...
- Patent number 8,547,725
- Issue date Oct 1, 2013
- Sandisk 3D LLC
- Tanmay Kumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composition of memory cell with resistance-switching layers
- Patent number 8,520,424
- Issue date Aug 27, 2013
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with carbon switching material having a reduced cross-s...
- Patent number 8,471,360
- Issue date Jun 25, 2013
- Sandisk 3D LLC
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with silicon-containing carbon switching layer and meth...
- Patent number 8,237,146
- Issue date Aug 7, 2012
- Sandisk 3D LLC
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for epitaxial silicon growth
- Patent number 8,152,918
- Issue date Apr 10, 2012
- Micron Technology, Inc.
- Jingyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-assembly process for memory array
- Patent number 8,008,213
- Issue date Aug 30, 2011
- Sandisk 3D LLC
- Li Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for epitaxial silicon growth
- Patent number 7,101,435
- Issue date Sep 5, 2006
- Micron Technology, Inc.
- Jingyan Zhang
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES
- Publication number 20200295259
- Publication date Sep 17, 2020
- ARM Limited
- Ming He
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES
- Publication number 20200176676
- Publication date Jun 4, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH CONTACT REGION SIDE...
- Publication number 20200127200
- Publication date Apr 23, 2020
- ARM Limited
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Storage System Using Opposite Polarity Programming Sig...
- Publication number 20140198558
- Publication date Jul 17, 2014
- SanDisk 3D LLC
- Jingyan Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-Volatile Storage System Using Opposite Polarity Programming Sig...
- Publication number 20120224413
- Publication date Sep 6, 2012
- Jingyan Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR EPITAXIAL SILICON GROWTH
- Publication number 20120180716
- Publication date Jul 19, 2012
- Micron Technology, Inc.
- Jingyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...
- Publication number 20120001150
- Publication date Jan 5, 2012
- April D. Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
Composition Of Memory Cell With Resistance-Switching Layers
- Publication number 20110310655
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-S...
- Publication number 20110254126
- Publication date Oct 20, 2011
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METH...
- Publication number 20110204474
- Publication date Aug 25, 2011
- Franz Kreupl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...
- Publication number 20110133151
- Publication date Jun 9, 2011
- SanDisk 3D LLC
- Yubao Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING...
- Publication number 20100142256
- Publication date Jun 10, 2010
- SANDISK 3D LLC
- Tanmay KUMAR
- G11 - INFORMATION STORAGE
Information Patent Application
Self-assembly process for memory array
- Publication number 20100078618
- Publication date Apr 1, 2010
- SANDISK 3D LLC
- Li Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for epitaxial silicon growth
- Publication number 20060243196
- Publication date Nov 2, 2006
- Jingyan Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods for epitaxial silicon growth
- Publication number 20040237881
- Publication date Dec 2, 2004
- Jingyan Zhang
- C30 - CRYSTAL GROWTH

Jingyan Zhang

Person

Patents Grantslast 30 patents

Fabrication of correlated electron material (CEM) devices

Methods for epitaxial silicon growth

Non-volatile storage system using opposite polarity programming sig...

Memory cell that employs a selectively fabricated carbon nano-tube...

Non-volatile storage system using opposite polarity programming sig...

Methods of forming a reversible resistance-switching metal-insulato...

Method of programming a nonvolatile memory cell by reverse biasing...

Composition of memory cell with resistance-switching layers

Memory cell with carbon switching material having a reduced cross-s...

Memory cell with silicon-containing carbon switching layer and meth...

Methods for epitaxial silicon growth

Self-assembly process for memory array

Methods for epitaxial silicon growth

Patents Applicationslast 30 patents

FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

CORRELATED ELECTRON MATERIAL (CEM) DEVICES WITH CONTACT REGION SIDE...

Non-Volatile Storage System Using Opposite Polarity Programming Sig...

Non-Volatile Storage System Using Opposite Polarity Programming Sig...

METHODS FOR EPITAXIAL SILICON GROWTH

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...

Composition Of Memory Cell With Resistance-Switching Layers

MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-S...

MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METH...

MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS...

METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING...

Self-assembly process for memory array

Methods for epitaxial silicon growth

Methods for epitaxial silicon growth