Jingyu Lian

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Sidewall structure and method of fabrication for reducing oxygen di...
- Patent number 7,042,705
- Issue date May 9, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Patent number 7,001,780
- Issue date Feb 21, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding shorting in capacitors
- Patent number 6,897,501
- Issue date May 24, 2005
- Infineon Technologies Aktiengesellschaft
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer barrier allowing recovery anneal for ferroelectric capa...
- Patent number 6,839,220
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Publication number 20050029563
- Publication date Feb 10, 2005
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of electrode re-crystallisation in a ferrocapacitor
- Publication number 20040201049
- Publication date Oct 14, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adhesion layer for Pt on SiO2
- Publication number 20040197984
- Publication date Oct 7, 2004
- Infineon Technologies North America Corp.
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING SHORTING IN CAPACITORS
- Publication number 20040169211
- Publication date Sep 2, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for formation of hardmask elements during a semiconductor de...
- Publication number 20040171274
- Publication date Sep 2, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall structure and method of fabrication for reducing oxygen di...
- Publication number 20040149477
- Publication date Aug 5, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING STRESS IN INTEGRATED CIRCUITS
- Publication number 20040124452
- Publication date Jul 1, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to produce low leakage high K materials in thin film form
- Publication number 20040121566
- Publication date Jun 24, 2004
- Infineon Technologies North America Corp.
- Robert Benjamin Laibowitz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Jingyu Lian

Person

Patents Grantslast 30 patents

Sidewall structure and method of fabrication for reducing oxygen di...

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

Avoiding shorting in capacitors

Multi-layer barrier allowing recovery anneal for ferroelectric capa...

Patents Applicationslast 30 patents

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

Suppression of electrode re-crystallisation in a ferrocapacitor

Adhesion layer for Pt on SiO2

AVOIDING SHORTING IN CAPACITORS

Method for formation of hardmask elements during a semiconductor de...

Sidewall structure and method of fabrication for reducing oxygen di...

REDUCING STRESS IN INTEGRATED CIRCUITS

Method to produce low leakage high K materials in thin film form