Jinqiao Xie

Person

Allen, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistors (HEMTS) including a yttrium (Y)...
- Patent number 12,166,118
- Issue date Dec 10, 2024
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having an aluminum-doped b...
- Patent number 12,074,214
- Issue date Aug 27, 2024
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating high efficiency, high linearity N-polar gall...
- Patent number 10,749,009
- Issue date Aug 18, 2020
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,734,512
- Issue date Aug 4, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,636,881
- Issue date Apr 28, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device
- Patent number 10,593,764
- Issue date Mar 17, 2020
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 10,559,665
- Issue date Feb 11, 2020
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode/depletion-mode field-effect transistor GAN technology
- Patent number 10,446,544
- Issue date Oct 15, 2019
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 10,290,713
- Issue date May 14, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous crystalline gallium nitride (GaN) PN structure with no i...
- Patent number 10,177,247
- Issue date Jan 8, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high thermal conductivity substrate and p...
- Patent number 10,090,172
- Issue date Oct 2, 2018
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high thermal conductivity substrate and p...
- Patent number 10,037,899
- Issue date Jul 31, 2018
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double heterojunction field effect transistor with polarization com...
- Patent number 9,972,708
- Issue date May 15, 2018
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) device and method of makin...
- Patent number 9,865,721
- Issue date Jan 9, 2018
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly transparent aluminum nitride single crystalline layers and d...
- Patent number 9,840,790
- Issue date Dec 12, 2017
- Hexatech, Inc.
- Akinori Koukitu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Power semiconductor devices incorporating single crystalline alumin...
- Patent number 9,748,409
- Issue date Aug 29, 2017
- Hexatech, Inc.
- Baxter Moody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic devices incorporating single crystalline aluminum ni...
- Patent number 9,680,062
- Issue date Jun 13, 2017
- Hexatech, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gallium nitride high-electron mobility transistor
- Patent number 9,640,650
- Issue date May 2, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride on high thermal conductivity material device and me...
- Patent number 9,337,278
- Issue date May 10, 2016
- TriQuint Semiconductor, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic devices incorporating single crystalline aluminum ni...
- Patent number 9,299,883
- Issue date Mar 29, 2016
- Hexatech, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy layer in a III-nitrade based heterojunction field eff...
- Patent number 9,202,905
- Issue date Dec 1, 2015
- TriQuint Semiconductor, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS
- Publication number 20240371992
- Publication date Nov 7, 2024
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...
- Publication number 20240355917
- Publication date Oct 24, 2024
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE GaN HFET
- Publication number 20230290834
- Publication date Sep 14, 2023
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...
- Publication number 20230223467
- Publication date Jul 13, 2023
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH
- Publication number 20230135911
- Publication date May 4, 2023
- Qorvo US, Inc.
- Edward A. Beam
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...
- Publication number 20220199813
- Publication date Jun 23, 2022
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20190267452
- Publication date Aug 29, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20190237570
- Publication date Aug 1, 2019
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20190035895
- Publication date Jan 31, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE/DEPLETION-MODE FIELD-EFFECT TRANSISTOR GAN TECHNOLOGY
- Publication number 20180358357
- Publication date Dec 13, 2018
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...
- Publication number 20180212045
- Publication date Jul 26, 2018
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMIN...
- Publication number 20180026144
- Publication date Jan 25, 2018
- Hexatech, Inc.
- Baxter Moody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE AND METHOD OF MAKIN...
- Publication number 20170365700
- Publication date Dec 21, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20170294529
- Publication date Oct 12, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE HETEROJUNCTION FIELD EFFECT TRANSISTOR WITH POLARIZATION COM...
- Publication number 20170278958
- Publication date Sep 28, 2017
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...
- Publication number 20170133295
- Publication date May 11, 2017
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...
- Publication number 20170133239
- Publication date May 11, 2017
- Qorvo US, Inc.
- Xing Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NI...
- Publication number 20160181474
- Publication date Jun 23, 2016
- Hexatech, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...
- Publication number 20150247260
- Publication date Sep 3, 2015
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR
- Publication number 20150200287
- Publication date Jul 16, 2015
- TriQuint Semiconductor, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMIN...
- Publication number 20140264714
- Publication date Sep 18, 2014
- Hexatech, Inc.
- Baxter Moody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NI...
- Publication number 20140209923
- Publication date Jul 31, 2014
- Hexatech, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS

Jinqiao Xie

Person

Patents Grantslast 30 patents

High electron mobility transistors (HEMTS) including a yttrium (Y)...

High electron mobility transistor device having an aluminum-doped b...

Process of fabricating high efficiency, high linearity N-polar gall...

High electron mobility transistor (HEMT) device

High electron mobility transistor (HEMT) device

High electron mobility transistor (HEMT) device

Field-effect transistor

Enhancement-mode/depletion-mode field-effect transistor GAN technology

Field-effect transistor

Continuous crystalline gallium nitride (GaN) PN structure with no i...

Semiconductor device with high thermal conductivity substrate and p...

Semiconductor device with high thermal conductivity substrate and p...

Double heterojunction field effect transistor with polarization com...

High electron mobility transistor (HEMT) device and method of makin...

Highly transparent aluminum nitride single crystalline layers and d...

Power semiconductor devices incorporating single crystalline alumin...

Optoelectronic devices incorporating single crystalline aluminum ni...

Doped gallium nitride high-electron mobility transistor

Gallium nitride on high thermal conductivity material device and me...

Optoelectronic devices incorporating single crystalline aluminum ni...

Digital alloy layer in a III-nitrade based heterojunction field eff...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...

ENHANCEMENT-MODE GaN HFET

HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) INCLUDING A YTTRIUM (Y)...

MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...

FIELD-EFFECT TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

FIELD-EFFECT TRANSISTOR

ENHANCEMENT-MODE/DEPLETION-MODE FIELD-EFFECT TRANSISTOR GAN TECHNOLOGY

CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO I...

POWER SEMICONDUCTOR DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMIN...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE AND METHOD OF MAKIN...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

DOUBLE HETEROJUNCTION FIELD EFFECT TRANSISTOR WITH POLARIZATION COM...

SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...

SEMICONDUCTOR DEVICE WITH HIGH THERMAL CONDUCTIVITY SUBSTRATE AND P...

OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NI...

HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

POWER SEMICONDUCTOR DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMIN...

OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NI...