Jinyong Cai

Person

Hangzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing trench MOSFET
- Patent number 11,398,561
- Issue date Jul 26, 2022
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing trench MOSFET
- Patent number 10,686,058
- Issue date Jun 16, 2020
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,290,715
- Issue date May 14, 2019
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH SEMICONDUCTOR POWER DEVICE AND LAYOUT THEREOF
- Publication number 20240321964
- Publication date Sep 26, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH MOSFET
- Publication number 20240128370
- Publication date Apr 18, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREFOR
- Publication number 20240105792
- Publication date Mar 28, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING TRENCH FET
- Publication number 20240105843
- Publication date Mar 28, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20230207684
- Publication date Jun 29, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20230207685
- Publication date Jun 29, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING CONDUCTING PATH IN DOPED REGION, TRENCH-TY...
- Publication number 20230077336
- Publication date Mar 16, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH MOSFET
- Publication number 20200343370
- Publication date Oct 29, 2020
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH MOSFET
- Publication number 20190109216
- Publication date Apr 11, 2019
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20180212027
- Publication date Jul 26, 2018
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS

Jinyong Cai

Person

Patents Grantslast 30 patents

Method for manufacturing trench MOSFET

Method for manufacturing trench MOSFET

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

TRENCH SEMICONDUCTOR POWER DEVICE AND LAYOUT THEREOF

METHOD FOR MANUFACTURING TRENCH MOSFET

TRENCH MOSFET AND MANUFACTURING METHOD THEREFOR

TRENCH FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING TRENCH FET

SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF

SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING CONDUCTING PATH IN DOPED REGION, TRENCH-TY...

METHOD FOR MANUFACTURING TRENCH MOSFET

METHOD FOR MANUFACTURING TRENCH MOSFET

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME