Jiun-Lei Jerry YU

Person

Zhudong Township, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crack stop ring trench to prevent epitaxy crack propagation
- Patent number 12,094,838
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jiun-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of III-V semiconductor layers
- Patent number 12,087,820
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
- Patent number 12,046,537
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices without...
- Patent number 11,843,047
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices with opt...
- Patent number 11,824,109
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 11,804,538
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crack stop ring trench to prevent epitaxy crack propagation
- Patent number 11,798,899
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jiun-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source leakage current suppression by source surrounding gate struc...
- Patent number 11,791,388
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier structure configured to increase performance of III-V devices
- Patent number 11,715,792
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ring transistor structure
- Patent number 11,664,431
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,741
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 11,532,740
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
- Patent number 11,521,915
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices with opt...
- Patent number 11,522,077
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 11,404,557
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices without...
- Patent number 11,349,023
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT device structure and manufacturing method thereof
- Patent number 11,222,968
- Issue date Jan 11, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 10,964,804
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,937,900
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making transistor having metal diffusion barrier
- Patent number 10,868,134
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- King-Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor structure
- Patent number 10,868,135
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ju Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 10,854,711
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 10,790,375
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 10,741,665
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,727,329
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Isolation structure for active devices
- Patent number 10,522,618
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor structure and method of making th...
- Patent number 10,522,630
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,522,671
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20240387719
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)
- Publication number 20240355711
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION
- Publication number 20240355761
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20230387281
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230369449
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION
- Publication number 20230369245
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RING TRANSISTOR STRUCTURE
- Publication number 20230261066
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230253455
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-SYUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION
- Publication number 20220375875
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jiun-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20220376086
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)
- Publication number 20220359346
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...
- Publication number 20220359681
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20220359738
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITHOUT...
- Publication number 20220285540
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RING TRANSISTOR STRUCTURE
- Publication number 20220223699
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20210376135
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20210280689
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...
- Publication number 20210273065
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)
- Publication number 20210265241
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20210242337
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210226047
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITHOUT...
- Publication number 20210098615
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20210043726
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20200373408
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200357910
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-SYUAN LIN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20200144408
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-CHIH CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20200083324
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20190252510
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei YAO
- H01 - BASIC ELECTRIC ELEMENTS

Jiun-Lei Jerry YU

Person

Patents Grantslast 30 patents

Semiconductor structure, HEMT structure and method of forming the same

Crack stop ring trench to prevent epitaxy crack propagation

Semiconductor device having a plurality of III-V semiconductor layers

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

Integration of p-channel and n-channel E-FET III-V devices without...

Integration of p-channel and n-channel E-FET III-V devices with opt...

Method of forming a high electron mobility transistor

Crack stop ring trench to prevent epitaxy crack propagation

Source leakage current suppression by source surrounding gate struc...

Barrier structure configured to increase performance of III-V devices

Isolation structure for active devices

Ring transistor structure

Semiconductor device

Semiconductor structure, HEMT structure and method of forming the same

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

Integration of p-channel and n-channel E-FET III-V devices with opt...

Method of forming a high electron mobility transistor

Integration of p-channel and n-channel E-FET III-V devices without...

HEMT device structure and manufacturing method thereof

Semiconductor structure, HEMT structure and method of forming the same

Semiconductor structure and manufacturing method thereof

Method of making transistor having metal diffusion barrier

High electron mobility transistor structure

Isolation structure for active devices

High electron mobility transistor

Method of forming a high electron mobility transistor

Semiconductor device

Isolation structure for active devices

High electron mobility transistor structure and method of making th...

Semiconductor structure and manufacturing method thereof

Patents Applicationslast 30 patents

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)

CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION

ISOLATION STRUCTURE FOR ACTIVE DEVICES

RING TRANSISTOR STRUCTURE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

CRACK STOP RING TRENCH TO PREVENT EPITAXY CRACK PROPAGATION

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)

SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITHOUT...

RING TRANSISTOR STRUCTURE

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

SOURCE LEAKAGE CURRENT SUPPRESSION BY SOURCE SURROUNDING GATE STRUC...

FRONT-END-OF-LINE (FEOL) THROUGH SEMICONDUCTOR-ON-SUBSTRATE VIA (TSV)

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITHOUT...

ISOLATION STRUCTURE FOR ACTIVE DEVICES

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

ISOLATION STRUCTURE FOR ACTIVE DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR