Jiunyu Tsai

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Techniques for MRAM MTJ top electrode to via interface
- Patent number 12,167,614
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
Information Patent Grant
Memory cell with top electrode via
- Patent number 11,889,769
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 11,678,493
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with top electrode via
- Patent number 11,489,107
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Che Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with top electrode via
- Patent number 11,469,372
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Che Ku
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for MRAM MTJ top electrode to via interface
- Patent number 11,189,659
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM MTJ top electrode connection
- Patent number 11,075,335
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 11,043,531
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM MTJ top electrode to metal layer interface incl...
- Patent number 11,005,032
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM MTJ top electrode to metal layer interface incl...
- Patent number 10,797,230
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with top electrode via
- Patent number 10,790,439
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for MRAM MTJ top electrode to metal layer interface incl...
- Patent number 10,522,740
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 10,504,958
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing mixed-dimension and void-free MRAM structure
- Patent number 10,109,790
- Issue date Oct 23, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing mixed-dimension and void-free MRAM structure
- Patent number 9,780,301
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE
- Publication number 20240381670
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20240090340
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230345842
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Cho WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20220359815
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Che Ku
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20220246843
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE
- Publication number 20220093684
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20210351345
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210313394
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20210028350
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20200403146
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Che Ku
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...
- Publication number 20200119258
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION
- Publication number 20200098982
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200091230
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE
- Publication number 20200075669
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20200035908
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Che Ku
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...
- Publication number 20200020848
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...
- Publication number 20190371996
- Publication date Dec 5, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20190140018
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20170352804
- Publication date Dec 7, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- HARRY-HAK-LAY CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MIXED-DIMENSION AND VOID-FREE MRAM STRUCTURE
- Publication number 20170301856
- Publication date Oct 19, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- HARRY-HAK-LAY CHUANG
- H01 - BASIC ELECTRIC ELEMENTS

Jiunyu Tsai

Person

Patents Grantslast 30 patents

Techniques for MRAM MTJ top electrode to via interface

Memory cell with top electrode via

Semiconductor structure and manufacturing method of the same

Memory cell with top electrode via

Memory cell with top electrode via

Techniques for MRAM MTJ top electrode to via interface

Techniques for MRAM MTJ top electrode connection

Semiconductor structure and manufacturing method of the same

Techniques for MRAM MTJ top electrode to metal layer interface incl...

Techniques for MRAM MTJ top electrode to metal layer interface incl...

Memory cell with top electrode via

Techniques for MRAM MTJ top electrode to metal layer interface incl...

Semiconductor structure and manufacturing method of the same

Method for manufacturing mixed-dimension and void-free MRAM structure

Method for manufacturing mixed-dimension and void-free MRAM structure

Patents Applicationslast 30 patents

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE

MEMORY CELL WITH TOP ELECTRODE VIA

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MEMORY CELL WITH TOP ELECTRODE VIA

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

MEMORY CELL WITH TOP ELECTRODE VIA

MEMORY CELL WITH TOP ELECTRODE VIA

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO VIA INTERFACE

MEMORY CELL WITH TOP ELECTRODE VIA

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...

TECHNIQUES FOR MRAM MTJ TOP ELECTRODE TO METAL LAYER INTERFACE INCL...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

METHOD FOR MANUFACTURING MIXED-DIMENSION AND VOID-FREE MRAM STRUCTURE