Joachim Hoepfner

Person

Planegg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a ferroelectric layer
- Patent number 6,790,676
- Issue date Sep 14, 2004
- Infineon Technologies AG
- Hans Cerva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an integrated semiconductor product
- Patent number 6,645,855
- Issue date Nov 11, 2003
- Infineon Technologies AG
- Joachim Hoepfner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping for DRAM with deep trenches and hemispherical grains
- Patent number 6,475,859
- Issue date Nov 5, 2002
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage, low capacitance isolation material
- Patent number 6,465,370
- Issue date Oct 15, 2002
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact between a monocrystalline silicon region and a polycrystall...
- Patent number 6,329,703
- Issue date Dec 11, 2001
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor
- Patent number 6,265,279
- Issue date Jul 24, 2001
- Infineon Technologies AG
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a polycrystalline silicon structure and polycr...
- Patent number 6,068,928
- Issue date May 30, 2000
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making planar heterobipolar transistor having trenched is...
- Patent number 5,340,755
- Issue date Aug 23, 1994
- Siemens Aktiegensellschaft
- Hans-Peter Zwicknagl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a self-aligned emitter-base-complex for he...
- Patent number 5,093,272
- Issue date Mar 3, 1992
- Siemens Aktiengesellschaft
- Joachim Hoepfner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for producing a ferroelectric layer
- Publication number 20030138977
- Publication date Jul 24, 2003
- Hans Cerva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating an integrated semiconductor product
- Publication number 20020064960
- Publication date May 30, 2002
- Joachim Hoepfner
- H01 - BASIC ELECTRIC ELEMENTS

Joachim Hoepfner

Person

Patents Grantslast 30 patents

Method for producing a ferroelectric layer

Method for fabricating an integrated semiconductor product

Plasma doping for DRAM with deep trenches and hemispherical grains

Low leakage, low capacitance isolation material

Contact between a monocrystalline silicon region and a polycrystall...

Method for fabricating a trench capacitor

Method for producing a polycrystalline silicon structure and polycr...

Method of making planar heterobipolar transistor having trenched is...

Manufacturing method for a self-aligned emitter-base-complex for he...

Patents Applicationslast 30 patents

Method for producing a ferroelectric layer

Method for fabricating an integrated semiconductor product