Joachim Metzger

Person

Butzbach, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with ferroelectric hafnium oxide and method fo...
- Patent number 9,269,785
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack formation for replacement gate technology
- Patent number 8,664,103
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in a high-K gate electrode structure after...
- Patent number 8,653,605
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-K metal gate electrode structures...
- Patent number 8,440,559
- Issue date May 14, 2013
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed by a replacement gate approach based on...
- Patent number 8,383,500
- Issue date Feb 26, 2013
- GLOBALFOUNDRIES Inc.
- Gerd Marxsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in a high-k gate electrode structure after...
- Patent number 8,343,837
- Issue date Jan 1, 2013
- GLOBALFOUNDRIES, INC.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing integrity of a high-k gate stack by confining a metal cap...
- Patent number 8,324,091
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-k metal gate electrode structures...
- Patent number 8,298,894
- Issue date Oct 30, 2012
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...
- Publication number 20240014320
- Publication date Jan 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTI...
- Publication number 20160204218
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FEROOELECTRIC HAFNIUM OXIDE AND METHOD FO...
- Publication number 20150214322
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...
- Publication number 20140015058
- Publication date Jan 16, 2014
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20130017679
- Publication date Jan 17, 2013
- GLOBALFOUNDRIES INC.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Stack Formation for Replacement Gate Technology
- Publication number 20120315749
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...
- Publication number 20120238086
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FORMED BY A REPLACEMENT GATE APPROACH BASED ON...
- Publication number 20110186931
- Publication date Aug 4, 2011
- Gerd Marxsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...
- Publication number 20110127590
- Publication date Jun 2, 2011
- Robert Binder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20100301427
- Publication date Dec 2, 2010
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...
- Publication number 20100221906
- Publication date Sep 2, 2010
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...
- Publication number 20100193872
- Publication date Aug 5, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS

Joachim Metzger

Person

Patents Grantslast 30 patents

Structures for a ferroelectric field-effect transistor and related...

Semiconductor device with ferroelectric hafnium oxide and method fo...

Metal gate stack formation for replacement gate technology

Work function adjustment in a high-K gate electrode structure after...

Work function adjustment in high-K metal gate electrode structures...

Semiconductor device formed by a replacement gate approach based on...

Work function adjustment in a high-k gate electrode structure after...

Enhancing integrity of a high-k gate stack by confining a metal cap...

Work function adjustment in high-k metal gate electrode structures...

Patents Applicationslast 30 patents

STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...

SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTI...

SEMICONDUCTOR DEVICE WITH FEROOELECTRIC HAFNIUM OXIDE AND METHOD FO...

WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

Metal Gate Stack Formation for Replacement Gate Technology

REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...

SEMICONDUCTOR DEVICE FORMED BY A REPLACEMENT GATE APPROACH BASED ON...

INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...

WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...